Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor

Jangyup Son, Soogil Lee, Sang Jin Kim, Byung Cheol Park, Han Koo Lee, Sanghoon Kim, Jae Hoon Kim, Byung Hee Hong, Jongill Hong

Research output: Contribution to journalArticlepeer-review

121 Citations (Scopus)


Graphene is currently at the forefront of cutting-edge science and technology due to exceptional electronic, optical, mechanical, and thermal properties. However, the absence of a sizeable band gap in graphene has been a major obstacle for application. To open and control a band gap in functionalized graphene, several gapping strategies have been developed. In particular, hydrogen plasma treatment has triggered a great scientific interest, because it has been known to be an efficient way to modify the surface of single-layered graphene and to apply for standard wafer-scale fabrication. Here we show a monolayer chemical-vapour-deposited graphene hydrogenated by indirect hydrogen plasma without structural defect and we demonstrate that a band gap can be tuned as wide as 3.9 eV by varying hydrogen coverage. We also show a hydrogenated graphene field-effect transistor, showing that on/off ratio changes over three orders of magnitude at room temperature.

Original languageEnglish
Article number13261
JournalNature communications
Publication statusPublished - 2016 Nov 10

Bibliographical note

Publisher Copyright:
© 2016 The Author(s).

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)


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