Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films

Taejin Choi; Seungmin Yeo; Jeong Gyu Song; Seunggi Seo; Byeonghyeon Jang; Soo Hyun Kim; Hyungjun Kim

doi:10.1016/j.surfcoat.2018.02.082

Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films

Taejin Choi, Seungmin Yeo, Jeong Gyu Song, Seunggi Seo, Byeonghyeon Jang, Soo Hyun Kim, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Hydrogenated amorphous carbon (a-C:H) thin films were prepared by hydrogen plasma-enhanced atomic layer deposition (PE-ALD). The a-C:H thin films were grown at low temperatures in the range of 150–350 °C using CBr₄ as the precursor and hydrogen plasma as the reactant. Raman spectroscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy and Fourier transform infrared measurements showed that the a-C:H films consist of hydrogenated nanocrystalline sp³ diamond, disordered sp³ carbon and sp²-hybridized graphitic carbon incorporated with oxygen as a main contaminant. Moreover, the incorporation of bromine and oxygen in the a-C:H films was significantly reduced upon increasing the growth temperature from 200 to 300 °C. Surface hydroxylation and precursor exposure pretreatments were employed to saturate the adsorption of CBr₄ precursors and enhance the initial nucleation of carbon during the deposition of the a-C:H thin film by the PE-ALD process. In addition, the conformal growth of a-C:H thin films on three-dimensional structures was confirmed.

Original language	English
Pages (from-to)	12-20
Number of pages	9
Journal	Surface and Coatings Technology
Volume	344
DOIs	https://doi.org/10.1016/j.surfcoat.2018.02.082
Publication status	Published - 2018 Jun 25

Bibliographical note

Funding Information:
This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korea government ( MSIP ) (Grant No. NRF- 2017R1C1B5076821 ). In addition, this work was supported by the Center for Integrated Smart Sensors funded by the Ministry of Science, ICT & Future Planning as Global Frontier Project (Project No. CISS- 2016M3A6A6930869 ). Appendix A

Funding Information:
This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (Grant No. NRF-2017R1C1B5076821). In addition, this work was supported by the Center for Integrated Smart Sensors funded by the Ministry of Science, ICT & Future Planning as Global Frontier Project (Project No. CISS-2016M3A6A6930869).

Publisher Copyright:
© 2018

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.surfcoat.2018.02.082

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title = "Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films",

abstract = "Hydrogenated amorphous carbon (a-C:H) thin films were prepared by hydrogen plasma-enhanced atomic layer deposition (PE-ALD). The a-C:H thin films were grown at low temperatures in the range of 150–350 °C using CBr4 as the precursor and hydrogen plasma as the reactant. Raman spectroscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy and Fourier transform infrared measurements showed that the a-C:H films consist of hydrogenated nanocrystalline sp3 diamond, disordered sp3 carbon and sp2-hybridized graphitic carbon incorporated with oxygen as a main contaminant. Moreover, the incorporation of bromine and oxygen in the a-C:H films was significantly reduced upon increasing the growth temperature from 200 to 300 °C. Surface hydroxylation and precursor exposure pretreatments were employed to saturate the adsorption of CBr4 precursors and enhance the initial nucleation of carbon during the deposition of the a-C:H thin film by the PE-ALD process. In addition, the conformal growth of a-C:H thin films on three-dimensional structures was confirmed.",

author = "Taejin Choi and Seungmin Yeo and Song, {Jeong Gyu} and Seunggi Seo and Byeonghyeon Jang and Kim, {Soo Hyun} and Hyungjun Kim",

note = "Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korea government ( MSIP ) (Grant No. NRF- 2017R1C1B5076821 ). In addition, this work was supported by the Center for Integrated Smart Sensors funded by the Ministry of Science, ICT & Future Planning as Global Frontier Project (Project No. CISS- 2016M3A6A6930869 ). Appendix A Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (Grant No. NRF-2017R1C1B5076821). In addition, this work was supported by the Center for Integrated Smart Sensors funded by the Ministry of Science, ICT & Future Planning as Global Frontier Project (Project No. CISS-2016M3A6A6930869). Publisher Copyright: {\textcopyright} 2018",

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AU - Choi, Taejin

AU - Yeo, Seungmin

AU - Song, Jeong Gyu

AU - Seo, Seunggi

AU - Jang, Byeonghyeon

AU - Kim, Soo Hyun

AU - Kim, Hyungjun

N1 - Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korea government ( MSIP ) (Grant No. NRF- 2017R1C1B5076821 ). In addition, this work was supported by the Center for Integrated Smart Sensors funded by the Ministry of Science, ICT & Future Planning as Global Frontier Project (Project No. CISS- 2016M3A6A6930869 ). Appendix A Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (Grant No. NRF-2017R1C1B5076821). In addition, this work was supported by the Center for Integrated Smart Sensors funded by the Ministry of Science, ICT & Future Planning as Global Frontier Project (Project No. CISS-2016M3A6A6930869). Publisher Copyright: © 2018

PY - 2018/6/25

Y1 - 2018/6/25

N2 - Hydrogenated amorphous carbon (a-C:H) thin films were prepared by hydrogen plasma-enhanced atomic layer deposition (PE-ALD). The a-C:H thin films were grown at low temperatures in the range of 150–350 °C using CBr4 as the precursor and hydrogen plasma as the reactant. Raman spectroscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy and Fourier transform infrared measurements showed that the a-C:H films consist of hydrogenated nanocrystalline sp3 diamond, disordered sp3 carbon and sp2-hybridized graphitic carbon incorporated with oxygen as a main contaminant. Moreover, the incorporation of bromine and oxygen in the a-C:H films was significantly reduced upon increasing the growth temperature from 200 to 300 °C. Surface hydroxylation and precursor exposure pretreatments were employed to saturate the adsorption of CBr4 precursors and enhance the initial nucleation of carbon during the deposition of the a-C:H thin film by the PE-ALD process. In addition, the conformal growth of a-C:H thin films on three-dimensional structures was confirmed.

AB - Hydrogenated amorphous carbon (a-C:H) thin films were prepared by hydrogen plasma-enhanced atomic layer deposition (PE-ALD). The a-C:H thin films were grown at low temperatures in the range of 150–350 °C using CBr4 as the precursor and hydrogen plasma as the reactant. Raman spectroscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy and Fourier transform infrared measurements showed that the a-C:H films consist of hydrogenated nanocrystalline sp3 diamond, disordered sp3 carbon and sp2-hybridized graphitic carbon incorporated with oxygen as a main contaminant. Moreover, the incorporation of bromine and oxygen in the a-C:H films was significantly reduced upon increasing the growth temperature from 200 to 300 °C. Surface hydroxylation and precursor exposure pretreatments were employed to saturate the adsorption of CBr4 precursors and enhance the initial nucleation of carbon during the deposition of the a-C:H thin film by the PE-ALD process. In addition, the conformal growth of a-C:H thin films on three-dimensional structures was confirmed.

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Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films

Abstract

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