The electrical characteristics of a transistor on a transferred silicon ribbon are demonstrated. The process temperature is limited to 200° C for potential use on plastic sheets. Additional hydrogen annealing reduces the threshold voltage and improves the transistor properties. A high mobility of around 160 cm2 /V s, with a high on/off ratio and an off current of as low as < 1011 A, is achieved. The flexibility of the device is evaluated after applying stress in the bended condition. The device shows very little change in properties with a bending radius <4 mm. Overall, good electrical and mechanical properties are demonstrated for future use on flexible device applications.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2010|
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering