Hydrogen defect passivation of silicon transistor on plastic for high performance flexible device application

Musarrat Hasan; Sun Jin Yun; Jae Bon Koo; Sang Hee Ko Park; Yong Hae Kim; Seung Youl Kang; Jonghyun Rho; Jee Hoon Kim; Houk Jang; Jong Hyun Ahn; Min Seok Jo; Hyunsang Hwang

doi:10.1149/1.3276689

Hydrogen defect passivation of silicon transistor on plastic for high performance flexible device application

Musarrat Hasan, Sun Jin Yun, Jae Bon Koo, Sang Hee Ko Park, Yong Hae Kim, Seung Youl Kang, Jonghyun Rho, Jee Hoon Kim, Houk Jang, Jong Hyun Ahn, Min Seok Jo, Hyunsang Hwang

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The electrical characteristics of a transistor on a transferred silicon ribbon are demonstrated. The process temperature is limited to 200° C for potential use on plastic sheets. Additional hydrogen annealing reduces the threshold voltage and improves the transistor properties. A high mobility of around 160 cm² /V s, with a high on/off ratio and an off current of as low as < 10¹¹ A, is achieved. The flexibility of the device is evaluated after applying stress in the bended condition. The device shows very little change in properties with a bending radius <4 mm. Overall, good electrical and mechanical properties are demonstrated for future use on flexible device applications.

Original language	English
Pages (from-to)	H80-H82
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	3
DOIs	https://doi.org/10.1149/1.3276689
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3276689

Cite this

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title = "Hydrogen defect passivation of silicon transistor on plastic for high performance flexible device application",

abstract = "The electrical characteristics of a transistor on a transferred silicon ribbon are demonstrated. The process temperature is limited to 200° C for potential use on plastic sheets. Additional hydrogen annealing reduces the threshold voltage and improves the transistor properties. A high mobility of around 160 cm2 /V s, with a high on/off ratio and an off current of as low as < 1011 A, is achieved. The flexibility of the device is evaluated after applying stress in the bended condition. The device shows very little change in properties with a bending radius <4 mm. Overall, good electrical and mechanical properties are demonstrated for future use on flexible device applications.",

author = "Musarrat Hasan and Yun, {Sun Jin} and Koo, {Jae Bon} and Park, {Sang Hee Ko} and Kim, {Yong Hae} and Kang, {Seung Youl} and Jonghyun Rho and Kim, {Jee Hoon} and Houk Jang and Ahn, {Jong Hyun} and Jo, {Min Seok} and Hyunsang Hwang",

year = "2010",

doi = "10.1149/1.3276689",

language = "English",

volume = "13",

pages = "H80--H82",

journal = "Electrochemical and Solid-State Letters",

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TY - JOUR

T1 - Hydrogen defect passivation of silicon transistor on plastic for high performance flexible device application

AU - Hasan, Musarrat

AU - Yun, Sun Jin

AU - Koo, Jae Bon

AU - Park, Sang Hee Ko

AU - Kim, Yong Hae

AU - Kang, Seung Youl

AU - Rho, Jonghyun

AU - Kim, Jee Hoon

AU - Jang, Houk

AU - Ahn, Jong Hyun

AU - Jo, Min Seok

AU - Hwang, Hyunsang

PY - 2010

Y1 - 2010

N2 - The electrical characteristics of a transistor on a transferred silicon ribbon are demonstrated. The process temperature is limited to 200° C for potential use on plastic sheets. Additional hydrogen annealing reduces the threshold voltage and improves the transistor properties. A high mobility of around 160 cm2 /V s, with a high on/off ratio and an off current of as low as < 1011 A, is achieved. The flexibility of the device is evaluated after applying stress in the bended condition. The device shows very little change in properties with a bending radius <4 mm. Overall, good electrical and mechanical properties are demonstrated for future use on flexible device applications.

AB - The electrical characteristics of a transistor on a transferred silicon ribbon are demonstrated. The process temperature is limited to 200° C for potential use on plastic sheets. Additional hydrogen annealing reduces the threshold voltage and improves the transistor properties. A high mobility of around 160 cm2 /V s, with a high on/off ratio and an off current of as low as < 1011 A, is achieved. The flexibility of the device is evaluated after applying stress in the bended condition. The device shows very little change in properties with a bending radius <4 mm. Overall, good electrical and mechanical properties are demonstrated for future use on flexible device applications.

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Hydrogen defect passivation of silicon transistor on plastic for high performance flexible device application

Abstract

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