Hopping conduction in p -type MoS2 near the critical regime of the metal-insulator transition

Tae Eon Park; Joonki Suh; Dongjea Seo; Joonsuk Park; Der Yuh Lin; Ying Sheng Huang; Heon Jin Choi; Junqiao Wu; Chaun Jang; Joonyeon Chang

doi:10.1063/1.4936571

Hopping conduction in p -type MoS₂ near the critical regime of the metal-insulator transition

Tae Eon Park, Joonki Suh, Dongjea Seo, Joonsuk Park, Der Yuh Lin, Ying Sheng Huang, Heon Jin Choi, Junqiao Wu, Chaun Jang, Joonyeon Chang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We report on temperature-dependent charge and magneto transport of chemically doped MoS₂, p-type molybdenum disulfide degenerately doped with niobium (MoS₂:Nb). The temperature dependence of the electrical resistivity is characterized by a power law, ρ(T) ∼ T^-0.25, which indicates that the system resides within the critical regime of the metal-insulator (M-I) transition. By applying high magnetic field (∼7 T), we observed a 20% increase in the resistivity at 2 K. The positive magnetoresistance shows that charge transport in this system is governed by the Mott-like three-dimensional variable range hopping (VRH) at low temperatures. According to relationship between magnetic-field and temperature dependencies of VRH resistivity, we extracted a characteristic localization length of 19.8 nm for MoS₂:Nb on the insulating side of the M-I transition.

Original language	English
Article number	223107
Journal	Applied Physics Letters
Volume	107
Issue number	22
DOIs	https://doi.org/10.1063/1.4936571
Publication status	Published - 2015 Nov 30

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4936571

Cite this

@article{2edc350881cb42f986a40d3e9282d931,

title = "Hopping conduction in p -type MoS2 near the critical regime of the metal-insulator transition",

abstract = "We report on temperature-dependent charge and magneto transport of chemically doped MoS2, p-type molybdenum disulfide degenerately doped with niobium (MoS2:Nb). The temperature dependence of the electrical resistivity is characterized by a power law, ρ(T) ∼ T-0.25, which indicates that the system resides within the critical regime of the metal-insulator (M-I) transition. By applying high magnetic field (∼7 T), we observed a 20% increase in the resistivity at 2 K. The positive magnetoresistance shows that charge transport in this system is governed by the Mott-like three-dimensional variable range hopping (VRH) at low temperatures. According to relationship between magnetic-field and temperature dependencies of VRH resistivity, we extracted a characteristic localization length of 19.8 nm for MoS2:Nb on the insulating side of the M-I transition.",

author = "Park, {Tae Eon} and Joonki Suh and Dongjea Seo and Joonsuk Park and Lin, {Der Yuh} and Huang, {Ying Sheng} and Choi, {Heon Jin} and Junqiao Wu and Chaun Jang and Joonyeon Chang",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = nov,

day = "30",

doi = "10.1063/1.4936571",

language = "English",

volume = "107",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - Hopping conduction in p -type MoS2 near the critical regime of the metal-insulator transition

AU - Park, Tae Eon

AU - Suh, Joonki

AU - Seo, Dongjea

AU - Park, Joonsuk

AU - Lin, Der Yuh

AU - Huang, Ying Sheng

AU - Choi, Heon Jin

AU - Wu, Junqiao

AU - Jang, Chaun

AU - Chang, Joonyeon

PY - 2015/11/30

Y1 - 2015/11/30

N2 - We report on temperature-dependent charge and magneto transport of chemically doped MoS2, p-type molybdenum disulfide degenerately doped with niobium (MoS2:Nb). The temperature dependence of the electrical resistivity is characterized by a power law, ρ(T) ∼ T-0.25, which indicates that the system resides within the critical regime of the metal-insulator (M-I) transition. By applying high magnetic field (∼7 T), we observed a 20% increase in the resistivity at 2 K. The positive magnetoresistance shows that charge transport in this system is governed by the Mott-like three-dimensional variable range hopping (VRH) at low temperatures. According to relationship between magnetic-field and temperature dependencies of VRH resistivity, we extracted a characteristic localization length of 19.8 nm for MoS2:Nb on the insulating side of the M-I transition.

AB - We report on temperature-dependent charge and magneto transport of chemically doped MoS2, p-type molybdenum disulfide degenerately doped with niobium (MoS2:Nb). The temperature dependence of the electrical resistivity is characterized by a power law, ρ(T) ∼ T-0.25, which indicates that the system resides within the critical regime of the metal-insulator (M-I) transition. By applying high magnetic field (∼7 T), we observed a 20% increase in the resistivity at 2 K. The positive magnetoresistance shows that charge transport in this system is governed by the Mott-like three-dimensional variable range hopping (VRH) at low temperatures. According to relationship between magnetic-field and temperature dependencies of VRH resistivity, we extracted a characteristic localization length of 19.8 nm for MoS2:Nb on the insulating side of the M-I transition.

UR - http://www.scopus.com/inward/record.url?scp=84948783345&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84948783345&partnerID=8YFLogxK

U2 - 10.1063/1.4936571

DO - 10.1063/1.4936571

M3 - Article

AN - SCOPUS:84948783345

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223107

ER -