Homogeneous ZnO p-n junction formed by continuous atomic layer deposition process

Kyung Mun Kang, Chan Lee, Minjae Kim, Haryeong Choi, Dong eun Kim, Seung Rok Kim, Jin Woo Park, Hyung Ho Park

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


The fabrication of electronic devices based on zinc oxide (ZnO) for various applications requires a stable and reproducible p-type nanostructure. Herein, a stable atomic layer deposition process is established, and N and F codoped p-type ZnO (NFZO) thin films are deposited on silicon, glass, and polyethylene terephthalate substrates, and Hall effect measurements demonstrate the p-type conductivity with a resistivity of 0.208 Ω∙cm, a carrier concentration of 1.84 × 1018 cm–3 and a mobility of 16.27 cm2∙V–1∙s–1. In addition, the I-V characteristics of a homogeneous and coherent p-n junction consisting of the p-type NFZO and a previously-developed n-type ZnO clearly demonstrate the rectifying nature. Moreover, the potential application of the fabricated light-emitting device in optoelectronics is demonstrated by electroluminescence analysis, with significant emission in the blue region. Finally, the piezoelectric screening effect that compromises the output performance of the piezoelectric nanogenerator is prevented by using the as-developed p-type NFZO.

Original languageEnglish
Article number166694
JournalJournal of Alloys and Compounds
Publication statusPublished - 2022 Dec 5

Bibliographical note

Publisher Copyright:
© 2022 Elsevier B.V.

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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