Homogeneous 2D MoTe₂ p–n Junctions and CMOS Inverters formed by Atomic-Layer-Deposition-Induced Doping

Engineering

• Pn Junction 100%
• Atomic Layer Deposition 66%
• Nanosheet 66%
• Semiconducting Material 66%
• Electronic Devices 66%
• Inverter 66%
• Nanometre 33%
• Electric Potential 33%
• Electric Power Utilization 33%
• Polarity 33%
• Charge Carrier 33%
• Dangling Bond 33%
• Surfaces 33%
• Demonstrates 33%
• Properties 33%

Material Science

• Semiconductor Material 33%
• Electron Mobility 33%
• Surface 33%
• Devices 33%
• Charge Carrier 33%
• Diode 33%