Abstract
We report on the room-temperature hole-mediated ferromagnetism in Zn 1-xMnxO thin films. Zn1-xMnxO (x = 0.03 and 0.20) films were prepared on GaAs (001) substrates by the rf magnetron cosputtering method. At the substrate temperature high enough to activate As diffusion from GaAs substrates, p-type Zn1-xMnxO films were synthesized. The superconducting quantum interference device (SQUID) and alternating gradient magnetometer (AGM) results clearly showed ferromagnetic characteristics at room temperature.
Original language | English |
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Pages (from-to) | L280-L283 |
Journal | Japanese Journal of Applied Physics |
Volume | 43 |
Issue number | 2 B |
DOIs | |
Publication status | Published - 2004 Feb 15 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)