Highly Stable Contact Doping in Organic Field Effect Transistors by Dopant-Blockade Method

Youngrok Kim, Katharina Broch, Woocheol Lee, Heebeom Ahn, Jonghoon Lee, Daekyoung Yoo, Junwoo Kim, Seungjun Chung, Henning Sirringhaus, Keehoon Kang, Takhee Lee

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


In organic device applications, a high contact resistance between metal electrodes and organic semiconductors prevents an efficient charge injection and extraction, which fundamentally limits the device performance. Recently, various contact doping methods have been reported as an effective way to resolve the contact resistance problem. However, the contact doping has not been explored extensively in organic field effect transistors (OFETs) due to dopant diffusion problem, which significantly degrades the device stability by damaging the ON/OFF switching performance. Here, the stability of a contact doping method is improved by incorporating “dopant-blockade molecules” in the poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT) film in order to suppress the diffusion of the dopant molecules. By carefully selecting the dopant-blockade molecules for effectively blocking the dopant diffusion paths, the ON/OFF ratio of PBTTT OFETs can be maintained over 2 months. This work will maximize the potential of OFETs by employing the contact doping method as a promising route toward resolving the contact resistance problem.

Original languageEnglish
Article number2000058
JournalAdvanced Functional Materials
Issue number28
Publication statusPublished - 2020 Jul 1

Bibliographical note

Publisher Copyright:
© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • General Chemistry
  • Condensed Matter Physics
  • General Materials Science
  • Electrochemistry
  • Biomaterials


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