Highly reliable threshold switching behavior of amorphous Ga₂Te₃ films deposited by RF sputtering

Physics

• Switching 100%
• Memory 100%
• Thin Films 33%
• Electric Potential 33%
• Selectivity 33%
• Speed 33%
• Arrays 33%
• Utilization 33%
• Stability 33%
• Pulses 33%
• Cycles 33%

Material Science

• Devices 100%
• Amorphous Material 100%
• Thin Films 33%
• Durability 33%
• Liquid Films 33%
• Material 33%

Medicine and Dentistry

• Memory 100%
• Measurement 33%
• Endurance 33%
• Pulse Rate 33%
• Selectivity 33%