Highly reliable threshold switching behavior of amorphous Ga2Te3 films deposited by RF sputtering

Dayoon Lee; Taeho Kim; Hyunchul Sohn

doi:10.7567/1882-0786/ab2cd9

Highly reliable threshold switching behavior of amorphous Ga₂Te₃ films deposited by RF sputtering

Dayoon Lee, Taeho Kim, Hyunchul Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Ga₂Te₃ is of great interest because of its memory and threshold switching properties and potential for memory device application. Here, device of TiN/Ga₂Te₃/TiN with two terminals was fabricated and its threshold switching was investigated. Current-voltage measurements showed the ovonic threshold switching of amorphous Ga₂Te₃ thin films at 300 K with a high switching speed of about 10 ns. AC pulse tests showed reliable switching endurance over 10⁹ switching cycles with the selectivity of 10³. Amorphous Ga₂Te₃ with outstanding stability is considered as potential materials for the selector devices of cross-point memory array.

Original language	English
Article number	085504
Journal	Applied Physics Express
Volume	12
Issue number	8
DOIs	https://doi.org/10.7567/1882-0786/ab2cd9
Publication status	Published - 2019 Aug 1

Bibliographical note

Funding Information:
This work was supported by the Ministry of Trade, Industry & Energy, Korea under the Industrial Strategic Technology Development Program (Grant no. 100680075) and the Brain Korea 21 Plus Projects.

Publisher Copyright:
© 2019 The Japan Society of Applied Physics.

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/1882-0786/ab2cd9

Cite this

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abstract = "Ga2Te3 is of great interest because of its memory and threshold switching properties and potential for memory device application. Here, device of TiN/Ga2Te3/TiN with two terminals was fabricated and its threshold switching was investigated. Current-voltage measurements showed the ovonic threshold switching of amorphous Ga2Te3 thin films at 300 K with a high switching speed of about 10 ns. AC pulse tests showed reliable switching endurance over 109 switching cycles with the selectivity of 103. Amorphous Ga2Te3 with outstanding stability is considered as potential materials for the selector devices of cross-point memory array.",

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AB - Ga2Te3 is of great interest because of its memory and threshold switching properties and potential for memory device application. Here, device of TiN/Ga2Te3/TiN with two terminals was fabricated and its threshold switching was investigated. Current-voltage measurements showed the ovonic threshold switching of amorphous Ga2Te3 thin films at 300 K with a high switching speed of about 10 ns. AC pulse tests showed reliable switching endurance over 109 switching cycles with the selectivity of 103. Amorphous Ga2Te3 with outstanding stability is considered as potential materials for the selector devices of cross-point memory array.

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