Highly reliable ReRAM technology with encapsulation process for 20nm and beyond

Dong Jun Seong, Min Kyu Yang, Hyunsu Ju, Jung Moo Lee, Eunmi Kim, Seungjae Jung, Jinwoo Lee, Gun Hwan Kim, Seol Choi, Lijie Zhang, Seong Geon Park, Youn Seon Kang, In Gyu Baek, Jungdal Choi, Ho Kyu Kang, Eunseung Jung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

ReRAM cell performance and reliability have been improved through process optimization. Encapsulated ReRAM cell with SiN capping layer shows excellent endurance, read disturb, and retention characteristics. We demonstrated that effective oxygen barrier encapsulation is critical for keeping ReRAM performance in an aggressively scaled technology node.

Original languageEnglish
Title of host publication2013 5th IEEE International Memory Workshop, IMW 2013
Pages42-43
Number of pages2
DOIs
Publication statusPublished - 2013
Event2013 5th IEEE International Memory Workshop, IMW 2013 - Monterey, CA, United States
Duration: 2013 May 262013 May 29

Publication series

Name2013 5th IEEE International Memory Workshop, IMW 2013

Conference

Conference2013 5th IEEE International Memory Workshop, IMW 2013
Country/TerritoryUnited States
CityMonterey, CA
Period13/5/2613/5/29

All Science Journal Classification (ASJC) codes

  • Software

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