Highly manufacturable 4Gb DRAM using 0.11μm DRAM technology

H. S. Jeong, W. S. Yang, Y. S. Hwang, C. H. Cho, S. Park, S. J. Ahn, Y. S. Chun, S. H. Shin, S. H. Song, J. Y. Lee, S. M. Jang, C. H. Lee, J. H. Jeong, M. H. Cho, J. K. Lee, K. Kim

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


4Gb DRAM has been developed successfully using 0.11μm DRAM technology. Considering manufacturability, we have focused to develop patterning technology that makes 0.11μm design rule possible using KrF lithography. Also, novel DRAM technologies, which give a big influence on the future DRAM integration, are developed as follows, using novel oxide(SOG) for the enhanced capability of gap-filling, borderless metal contact and stud processes, line-type storage node SAC, thin gate oxide, and CVD Al process for metal interconnections.

Original languageEnglish
Pages (from-to)353-356
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2000
Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: 2000 Dec 102000 Dec 13

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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