Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots

Jung Ho Yoon, Jeong Hwan Han, Ji Sim Jung, Woojin Jeon, Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, Kyung Jean Yoon, Min Hwan Lee, Cheol Seong Hwang

Research output: Contribution to journalArticlepeer-review

164 Citations (Scopus)

Abstract

Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.

Original languageEnglish
Pages (from-to)1987-1992
Number of pages6
JournalAdvanced Materials
Volume25
Issue number14
DOIs
Publication statusPublished - 2013 Apr 11

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering

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