Highly enhanced electron injection in organic light-emitting diodes with an n-type semiconducting MnO2 layer

Hyunbok Lee; Jeihyun Lee; Pyungeun Jeon; Kwangho Jeong; Yeonjin Yi; Tae Gun Kim; Jeong Won Kim; Jin Woo Lee

doi:10.1016/j.orgel.2012.01.012

Highly enhanced electron injection in organic light-emitting diodes with an n-type semiconducting MnO₂ layer

Hyunbok Lee, Jeihyun Lee, Pyungeun Jeon, Kwangho Jeong, Yeonjin Yi, Tae Gun Kim, Jeong Won Kim, Jin Woo Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Highly enhanced electron injection is demonstrated with a thin manganese dioxide (MnO₂) electron injection layer (EIL) in Alq ₃-based organic light-emitting diodes. Insertion of the MnO ₂ EIL between the Al cathode and Alq₃ results in highly improved device characteristics. In situ photoelectron spectroscopy shows remarkable reduction of the electron injection barrier without significant chemical reactions between Alq₃ and MnO₂, which could induce Alq₃ destruction. The reduction of the electron injection barrier is due to the n-type doping effect, and the lack of strong interfacial reaction is advantageous with regards to more efficient electron injection than a conventional LiF EIL. These properties render the MnO₂, a potential EIL.

Original language	English
Pages (from-to)	820-825
Number of pages	6
Journal	Organic Electronics
Volume	13
Issue number	5
DOIs	https://doi.org/10.1016/j.orgel.2012.01.012
Publication status	Published - 2012 May

Bibliographical note

Funding Information:
This work was supported by Brain Korea 21 (BK21) project of the ministry of Education, Science and Technology and by a research project of the National Research Foundation of Korea (Grant Nos. 2011-0004748 and 2011-0026100 ).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Chemistry(all)
Biomaterials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.orgel.2012.01.012

Cite this

@article{13af0c1ef10445f59576ec90f7fd5fbe,

title = "Highly enhanced electron injection in organic light-emitting diodes with an n-type semiconducting MnO2 layer",

abstract = "Highly enhanced electron injection is demonstrated with a thin manganese dioxide (MnO2) electron injection layer (EIL) in Alq 3-based organic light-emitting diodes. Insertion of the MnO 2 EIL between the Al cathode and Alq3 results in highly improved device characteristics. In situ photoelectron spectroscopy shows remarkable reduction of the electron injection barrier without significant chemical reactions between Alq3 and MnO2, which could induce Alq3 destruction. The reduction of the electron injection barrier is due to the n-type doping effect, and the lack of strong interfacial reaction is advantageous with regards to more efficient electron injection than a conventional LiF EIL. These properties render the MnO2, a potential EIL.",

author = "Hyunbok Lee and Jeihyun Lee and Pyungeun Jeon and Kwangho Jeong and Yeonjin Yi and Kim, {Tae Gun} and Kim, {Jeong Won} and Lee, {Jin Woo}",

note = "Funding Information: This work was supported by Brain Korea 21 (BK21) project of the ministry of Education, Science and Technology and by a research project of the National Research Foundation of Korea (Grant Nos. 2011-0004748 and 2011-0026100 ).",

year = "2012",

month = may,

doi = "10.1016/j.orgel.2012.01.012",

language = "English",

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issn = "1566-1199",

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AU - Lee, Hyunbok

AU - Lee, Jeihyun

AU - Jeon, Pyungeun

AU - Jeong, Kwangho

AU - Yi, Yeonjin

AU - Kim, Tae Gun

AU - Kim, Jeong Won

AU - Lee, Jin Woo

N1 - Funding Information: This work was supported by Brain Korea 21 (BK21) project of the ministry of Education, Science and Technology and by a research project of the National Research Foundation of Korea (Grant Nos. 2011-0004748 and 2011-0026100 ).

PY - 2012/5

Y1 - 2012/5

N2 - Highly enhanced electron injection is demonstrated with a thin manganese dioxide (MnO2) electron injection layer (EIL) in Alq 3-based organic light-emitting diodes. Insertion of the MnO 2 EIL between the Al cathode and Alq3 results in highly improved device characteristics. In situ photoelectron spectroscopy shows remarkable reduction of the electron injection barrier without significant chemical reactions between Alq3 and MnO2, which could induce Alq3 destruction. The reduction of the electron injection barrier is due to the n-type doping effect, and the lack of strong interfacial reaction is advantageous with regards to more efficient electron injection than a conventional LiF EIL. These properties render the MnO2, a potential EIL.

AB - Highly enhanced electron injection is demonstrated with a thin manganese dioxide (MnO2) electron injection layer (EIL) in Alq 3-based organic light-emitting diodes. Insertion of the MnO 2 EIL between the Al cathode and Alq3 results in highly improved device characteristics. In situ photoelectron spectroscopy shows remarkable reduction of the electron injection barrier without significant chemical reactions between Alq3 and MnO2, which could induce Alq3 destruction. The reduction of the electron injection barrier is due to the n-type doping effect, and the lack of strong interfacial reaction is advantageous with regards to more efficient electron injection than a conventional LiF EIL. These properties render the MnO2, a potential EIL.

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