Highly Efficient Photocurrent Generation from Nanocrystalline Graphene-Molybdenum Disulfide Lateral Interfaces

Kang Hyuck Lee; Tae Ho Kim; Hyun Jin Shin; Sang Woo Kim

doi:10.1002/adma.201504865

Highly Efficient Photocurrent Generation from Nanocrystalline Graphene-Molybdenum Disulfide Lateral Interfaces

Kang Hyuck Lee, Tae Ho Kim, Hyun Jin Shin, Sang Woo Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Nanocrystalline graphene-MoS₂ lateral interfaces reveal distinct current-rectified characteristics, similar to a p-n diode, that are seldom observed for the monolayer graphene-MoS₂ vertical interface. It is found that the lateral interfaces can increase the Schottky barrier between the graphene and the MoS₂ because the metallic MoS₂ edges cause charge reordering and a potential shift in the graphene.

Original language	English
Pages (from-to)	1793-1798
Number of pages	6
Journal	Advanced Materials
Volume	28
Issue number	9
DOIs	https://doi.org/10.1002/adma.201504865
Publication status	Published - 2016 Mar 2

Bibliographical note

Funding Information:
This research was financially supported by the Center for Advanced Soft-Electronics as the Global Frontier Project (2013M3A6A5073177), Basic Science Research Program (2009–0083540) through the National Research Foundation (NRF) of Korea Grant funded by the Ministry of Science, ICT & Future Planning and Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted fi nancial resource from the Ministry of Trade, Industry & Energy, Korea (No. 20154030200870).

Publisher Copyright:
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201504865

Cite this

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title = "Highly Efficient Photocurrent Generation from Nanocrystalline Graphene-Molybdenum Disulfide Lateral Interfaces",

abstract = "Nanocrystalline graphene-MoS2 lateral interfaces reveal distinct current-rectified characteristics, similar to a p-n diode, that are seldom observed for the monolayer graphene-MoS2 vertical interface. It is found that the lateral interfaces can increase the Schottky barrier between the graphene and the MoS2 because the metallic MoS2 edges cause charge reordering and a potential shift in the graphene.",

author = "Lee, {Kang Hyuck} and Kim, {Tae Ho} and Shin, {Hyun Jin} and Kim, {Sang Woo}",

note = "Funding Information: This research was financially supported by the Center for Advanced Soft-Electronics as the Global Frontier Project (2013M3A6A5073177), Basic Science Research Program (2009–0083540) through the National Research Foundation (NRF) of Korea Grant funded by the Ministry of Science, ICT & Future Planning and Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted fi nancial resource from the Ministry of Trade, Industry & Energy, Korea (No. 20154030200870). Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

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doi = "10.1002/adma.201504865",

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AU - Lee, Kang Hyuck

AU - Kim, Tae Ho

AU - Shin, Hyun Jin

AU - Kim, Sang Woo

N1 - Funding Information: This research was financially supported by the Center for Advanced Soft-Electronics as the Global Frontier Project (2013M3A6A5073177), Basic Science Research Program (2009–0083540) through the National Research Foundation (NRF) of Korea Grant funded by the Ministry of Science, ICT & Future Planning and Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted fi nancial resource from the Ministry of Trade, Industry & Energy, Korea (No. 20154030200870). Publisher Copyright: © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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N2 - Nanocrystalline graphene-MoS2 lateral interfaces reveal distinct current-rectified characteristics, similar to a p-n diode, that are seldom observed for the monolayer graphene-MoS2 vertical interface. It is found that the lateral interfaces can increase the Schottky barrier between the graphene and the MoS2 because the metallic MoS2 edges cause charge reordering and a potential shift in the graphene.

AB - Nanocrystalline graphene-MoS2 lateral interfaces reveal distinct current-rectified characteristics, similar to a p-n diode, that are seldom observed for the monolayer graphene-MoS2 vertical interface. It is found that the lateral interfaces can increase the Schottky barrier between the graphene and the MoS2 because the metallic MoS2 edges cause charge reordering and a potential shift in the graphene.

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Highly Efficient Photocurrent Generation from Nanocrystalline Graphene-Molybdenum Disulfide Lateral Interfaces

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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