Highly Efficient Photocurrent Generation from Nanocrystalline Graphene-Molybdenum Disulfide Lateral Interfaces

Kang Hyuck Lee, Tae Ho Kim, Hyun Jin Shin, Sang Woo Kim

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Nanocrystalline graphene-MoS2 lateral interfaces reveal distinct current-rectified characteristics, similar to a p-n diode, that are seldom observed for the monolayer graphene-MoS2 vertical interface. It is found that the lateral interfaces can increase the Schottky barrier between the graphene and the MoS2 because the metallic MoS2 edges cause charge reordering and a potential shift in the graphene.

Original languageEnglish
Pages (from-to)1793-1798
Number of pages6
JournalAdvanced Materials
Issue number9
Publication statusPublished - 2016 Mar 2

Bibliographical note

Funding Information:
This research was financially supported by the Center for Advanced Soft-Electronics as the Global Frontier Project (2013M3A6A5073177), Basic Science Research Program (2009–0083540) through the National Research Foundation (NRF) of Korea Grant funded by the Ministry of Science, ICT & Future Planning and Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted fi nancial resource from the Ministry of Trade, Industry & Energy, Korea (No. 20154030200870).

Publisher Copyright:
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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