Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells

Dong Won Kang; Jang Yeon Kwon; Jenny Shim; Heon Min Lee; Min Koo Han

doi:10.1016/j.solmat.2012.06.041

Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells

Dong Won Kang, Jang Yeon Kwon, Jenny Shim, Heon Min Lee, Min Koo Han

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an anti-reflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (μc-Si:H) in order to decrease optical reflection. The efficiency (8.81%) of μc-Si:H single junction thin film solar cell with the proposed GaN ARL exceeded that of the cell (8.36%) with the widely used TiO ₂/ZnO bilayer ARL. Moreover, the proposed GaN ARL requires no protection layer against hydrogen plasma such as ZnO overcoating (∼10 nm) in case of the TiO ₂/ZnO bilayer. GaN ARL can replace the TiO ₂/ZnO bilayer ARL in terms of high performance and simple fabrication process.

Original language	English
Pages (from-to)	317-321
Number of pages	5
Journal	Solar Energy Materials and Solar Cells
Volume	105
DOIs	https://doi.org/10.1016/j.solmat.2012.06.041
Publication status	Published - 2012 Oct

Bibliographical note

Funding Information:
This work was supported by the Global Leading Technology Program (No. 2011T100100039 ) of the Office of Strategic R&D Planning (OSP) funded by the Ministry of Knowledge Economy, Republic of Korea.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solmat.2012.06.041

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@article{abe949ec74e541c38c42676e2c636847,

title = "Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells",

abstract = "Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an anti-reflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (μc-Si:H) in order to decrease optical reflection. The efficiency (8.81%) of μc-Si:H single junction thin film solar cell with the proposed GaN ARL exceeded that of the cell (8.36%) with the widely used TiO 2/ZnO bilayer ARL. Moreover, the proposed GaN ARL requires no protection layer against hydrogen plasma such as ZnO overcoating (∼10 nm) in case of the TiO 2/ZnO bilayer. GaN ARL can replace the TiO 2/ZnO bilayer ARL in terms of high performance and simple fabrication process.",

author = "Kang, {Dong Won} and Kwon, {Jang Yeon} and Jenny Shim and Lee, {Heon Min} and Han, {Min Koo}",

note = "Funding Information: This work was supported by the Global Leading Technology Program (No. 2011T100100039 ) of the Office of Strategic R&D Planning (OSP) funded by the Ministry of Knowledge Economy, Republic of Korea.",

year = "2012",

month = oct,

doi = "10.1016/j.solmat.2012.06.041",

language = "English",

volume = "105",

pages = "317--321",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells

AU - Kang, Dong Won

AU - Kwon, Jang Yeon

AU - Shim, Jenny

AU - Lee, Heon Min

AU - Han, Min Koo

N1 - Funding Information: This work was supported by the Global Leading Technology Program (No. 2011T100100039 ) of the Office of Strategic R&D Planning (OSP) funded by the Ministry of Knowledge Economy, Republic of Korea.

PY - 2012/10

Y1 - 2012/10

N2 - Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an anti-reflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (μc-Si:H) in order to decrease optical reflection. The efficiency (8.81%) of μc-Si:H single junction thin film solar cell with the proposed GaN ARL exceeded that of the cell (8.36%) with the widely used TiO 2/ZnO bilayer ARL. Moreover, the proposed GaN ARL requires no protection layer against hydrogen plasma such as ZnO overcoating (∼10 nm) in case of the TiO 2/ZnO bilayer. GaN ARL can replace the TiO 2/ZnO bilayer ARL in terms of high performance and simple fabrication process.

AB - Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an anti-reflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (μc-Si:H) in order to decrease optical reflection. The efficiency (8.81%) of μc-Si:H single junction thin film solar cell with the proposed GaN ARL exceeded that of the cell (8.36%) with the widely used TiO 2/ZnO bilayer ARL. Moreover, the proposed GaN ARL requires no protection layer against hydrogen plasma such as ZnO overcoating (∼10 nm) in case of the TiO 2/ZnO bilayer. GaN ARL can replace the TiO 2/ZnO bilayer ARL in terms of high performance and simple fabrication process.

UR - http://www.scopus.com/inward/record.url?scp=84864469955&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864469955&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2012.06.041

DO - 10.1016/j.solmat.2012.06.041

M3 - Article

AN - SCOPUS:84864469955

SN - 0927-0248

VL - 105

SP - 317

EP - 321

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

UN SDGs

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