Highly conductive boron-doped nanocrystalline silicon-carbide film prepared by low-hydrogen-dilution photo-CVD method using ethylene as a carbon source

Seung Yeop Myong; Hyung Kew Lee; Euisik Yoon; Koeng Su Lim

doi:10.1016/S0022-3093(02)00916-X

Highly conductive boron-doped nanocrystalline silicon-carbide film prepared by low-hydrogen-dilution photo-CVD method using ethylene as a carbon source

Seung Yeop Myong, Hyung Kew Lee, Euisik Yoon, Koeng Su Lim

Yonsei Advanced Science Institute

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

Boron-doped nanocrystalline silicon-carbide (p-nc-SiC:H) films with a low-concentration of hydrogen-dilution were grown by a mercury-sensitized photo-chemical vapor deposition method using silane (SiH₄), hydrogen (H₂), diborane (B₂H₆), and ethylene (C₂H₄) as a carbon source. From the Raman and FTIR spectrum measurements, the p-nc-SiC:H film is composed of nanosize crystal silicon embedded in a hydrogenated amorphous silicon-carbide matrix. A dark conductivity as high as 1.7 × 10^-1 S/cm, with an optical bandgap is 2.0 eV, and a crystal volume fraction of 50%, were obtained. We tested these films as window material for amorphous silicon solar cells, obtaining an initial conversion efficiency of 10.4% without using any back reflectors.

Original language	English
Pages (from-to)	131-136
Number of pages	6
Journal	Journal of Non-Crystalline Solids
Volume	298
Issue number	2-3
DOIs	https://doi.org/10.1016/S0022-3093(02)00916-X
Publication status	Published - 2002 Mar

Bibliographical note

Funding Information:
This work was supported by grant no. 1999-1-301-003-3 from the Basic Research Program of the Korea Science and Engineering Foundation.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/S0022-3093(02)00916-X

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@article{84799321de354013bf2bdf7cb9ae64de,

title = "Highly conductive boron-doped nanocrystalline silicon-carbide film prepared by low-hydrogen-dilution photo-CVD method using ethylene as a carbon source",

abstract = "Boron-doped nanocrystalline silicon-carbide (p-nc-SiC:H) films with a low-concentration of hydrogen-dilution were grown by a mercury-sensitized photo-chemical vapor deposition method using silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) as a carbon source. From the Raman and FTIR spectrum measurements, the p-nc-SiC:H film is composed of nanosize crystal silicon embedded in a hydrogenated amorphous silicon-carbide matrix. A dark conductivity as high as 1.7 × 10-1 S/cm, with an optical bandgap is 2.0 eV, and a crystal volume fraction of 50%, were obtained. We tested these films as window material for amorphous silicon solar cells, obtaining an initial conversion efficiency of 10.4% without using any back reflectors.",

author = "{Yeop Myong}, Seung and {Kew Lee}, Hyung and Euisik Yoon and {Su Lim}, Koeng",

note = "Funding Information: This work was supported by grant no. 1999-1-301-003-3 from the Basic Research Program of the Korea Science and Engineering Foundation.",

year = "2002",

month = mar,

doi = "10.1016/S0022-3093(02)00916-X",

language = "English",

volume = "298",

pages = "131--136",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

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T1 - Highly conductive boron-doped nanocrystalline silicon-carbide film prepared by low-hydrogen-dilution photo-CVD method using ethylene as a carbon source

AU - Yeop Myong, Seung

AU - Kew Lee, Hyung

AU - Yoon, Euisik

AU - Su Lim, Koeng

N1 - Funding Information: This work was supported by grant no. 1999-1-301-003-3 from the Basic Research Program of the Korea Science and Engineering Foundation.

PY - 2002/3

Y1 - 2002/3

N2 - Boron-doped nanocrystalline silicon-carbide (p-nc-SiC:H) films with a low-concentration of hydrogen-dilution were grown by a mercury-sensitized photo-chemical vapor deposition method using silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) as a carbon source. From the Raman and FTIR spectrum measurements, the p-nc-SiC:H film is composed of nanosize crystal silicon embedded in a hydrogenated amorphous silicon-carbide matrix. A dark conductivity as high as 1.7 × 10-1 S/cm, with an optical bandgap is 2.0 eV, and a crystal volume fraction of 50%, were obtained. We tested these films as window material for amorphous silicon solar cells, obtaining an initial conversion efficiency of 10.4% without using any back reflectors.

AB - Boron-doped nanocrystalline silicon-carbide (p-nc-SiC:H) films with a low-concentration of hydrogen-dilution were grown by a mercury-sensitized photo-chemical vapor deposition method using silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) as a carbon source. From the Raman and FTIR spectrum measurements, the p-nc-SiC:H film is composed of nanosize crystal silicon embedded in a hydrogenated amorphous silicon-carbide matrix. A dark conductivity as high as 1.7 × 10-1 S/cm, with an optical bandgap is 2.0 eV, and a crystal volume fraction of 50%, were obtained. We tested these films as window material for amorphous silicon solar cells, obtaining an initial conversion efficiency of 10.4% without using any back reflectors.

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JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 2-3

ER -

Highly conductive boron-doped nanocrystalline silicon-carbide film prepared by low-hydrogen-dilution photo-CVD method using ethylene as a carbon source

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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