High-voltage wordline generator for low-power program operation in NAND flash memories

Sam Kyu Won; Yujong Noh; Hyunchul Cho; Jeil Ryu; Sungwook Choi; Sungdae Choi; Duckju Kim; Junseop Chung; Bongseok Han; Eui Young Chung

doi:10.1109/ASSCC.2011.6123629

High-voltage wordline generator for low-power program operation in NAND flash memories

Sam Kyu Won, Yujong Noh, Hyunchul Cho, Jeil Ryu, Sungwook Choi, Sungdae Choi, Duckju Kim, Junseop Chung, Bongseok Han, Eui Young Chung

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Citations (Scopus)

Abstract

High-voltage wordline generation circuit with stage-controlled charge pump is developed for low-power NAND flash memories. The proposed stage-controlled charge pump controls an optimized number of stages according to the required program voltage. The proposed high-voltage generator provides sleep-mode operation by turning off the driving clock and regulators during the program verify operation. Using these techniques, the proposed high-voltage generator reduces about 50 percent of power consumption in comparison with a conventional scheme.

Original language	English
Title of host publication	2011 Proceedings of Technical Papers
Subtitle of host publication	IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011
Pages	169-172
Number of pages	4
DOIs	https://doi.org/10.1109/ASSCC.2011.6123629
Publication status	Published - 2011
Event	7th IEEE Asian Solid-State Circuits Conference, A-SSCC 2011 - Jeju, Korea, Republic of Duration: 2011 Nov 14 → 2011 Nov 16

Publication series

Name	2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011

Other

Other	7th IEEE Asian Solid-State Circuits Conference, A-SSCC 2011
Country/Territory	Korea, Republic of
City	Jeju
Period	11/11/14 → 11/11/16

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ASSCC.2011.6123629

Cite this

Won, S. K., Noh, Y., Cho, H., Ryu, J., Choi, S., Choi, S., Kim, D., Chung, J., Han, B., & Chung, E. Y. (2011). High-voltage wordline generator for low-power program operation in NAND flash memories. In 2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011 (pp. 169-172). Article 6123629 (2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011). https://doi.org/10.1109/ASSCC.2011.6123629

@inproceedings{b87e972cb9b1491a925438b91c1dea96,

title = "High-voltage wordline generator for low-power program operation in NAND flash memories",

abstract = "High-voltage wordline generation circuit with stage-controlled charge pump is developed for low-power NAND flash memories. The proposed stage-controlled charge pump controls an optimized number of stages according to the required program voltage. The proposed high-voltage generator provides sleep-mode operation by turning off the driving clock and regulators during the program verify operation. Using these techniques, the proposed high-voltage generator reduces about 50 percent of power consumption in comparison with a conventional scheme.",

author = "Won, {Sam Kyu} and Yujong Noh and Hyunchul Cho and Jeil Ryu and Sungwook Choi and Sungdae Choi and Duckju Kim and Junseop Chung and Bongseok Han and Chung, {Eui Young}",

year = "2011",

doi = "10.1109/ASSCC.2011.6123629",

language = "English",

isbn = "9781467303989",

series = "2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011",

pages = "169--172",

booktitle = "2011 Proceedings of Technical Papers",

note = "7th IEEE Asian Solid-State Circuits Conference, A-SSCC 2011 ; Conference date: 14-11-2011 Through 16-11-2011",

}

Won, SK, Noh, Y, Cho, H, Ryu, J, Choi, S, Choi, S, Kim, D, Chung, J, Han, B & Chung, EY 2011, High-voltage wordline generator for low-power program operation in NAND flash memories. in 2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011., 6123629, 2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011, pp. 169-172, 7th IEEE Asian Solid-State Circuits Conference, A-SSCC 2011, Jeju, Korea, Republic of, 11/11/14. https://doi.org/10.1109/ASSCC.2011.6123629

High-voltage wordline generator for low-power program operation in NAND flash memories. / Won, Sam Kyu; Noh, Yujong; Cho, Hyunchul et al.
2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011. 2011. p. 169-172 6123629 (2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - High-voltage wordline generator for low-power program operation in NAND flash memories

AU - Won, Sam Kyu

AU - Noh, Yujong

AU - Cho, Hyunchul

AU - Ryu, Jeil

AU - Choi, Sungwook

AU - Choi, Sungdae

AU - Kim, Duckju

AU - Chung, Junseop

AU - Han, Bongseok

AU - Chung, Eui Young

PY - 2011

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N2 - High-voltage wordline generation circuit with stage-controlled charge pump is developed for low-power NAND flash memories. The proposed stage-controlled charge pump controls an optimized number of stages according to the required program voltage. The proposed high-voltage generator provides sleep-mode operation by turning off the driving clock and regulators during the program verify operation. Using these techniques, the proposed high-voltage generator reduces about 50 percent of power consumption in comparison with a conventional scheme.

AB - High-voltage wordline generation circuit with stage-controlled charge pump is developed for low-power NAND flash memories. The proposed stage-controlled charge pump controls an optimized number of stages according to the required program voltage. The proposed high-voltage generator provides sleep-mode operation by turning off the driving clock and regulators during the program verify operation. Using these techniques, the proposed high-voltage generator reduces about 50 percent of power consumption in comparison with a conventional scheme.

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BT - 2011 Proceedings of Technical Papers

T2 - 7th IEEE Asian Solid-State Circuits Conference, A-SSCC 2011

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ER -

Won SK, Noh Y, Cho H, Ryu J, Choi S, Choi S et al. High-voltage wordline generator for low-power program operation in NAND flash memories. In 2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011. 2011. p. 169-172. 6123629. (2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011). doi: 10.1109/ASSCC.2011.6123629

High-voltage wordline generator for low-power program operation in NAND flash memories

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