Abstract
The de and RF performance of a p-type diamond MESFET is simulated and compared with the simulated performance of an n-type GaAs MESFET over the operating temperature range, 300-923 K. Power performance of a diamond MESFET is shown to improve with increasing temperature and to exceed that of a GaAs MESFET when operated at temperatures higher than 550 K. At 923 K the simulated diamond MESFET produces about 0.8 W/mm of output power for an operating frequency of 5 GHz. Small signal current gain for a diamond MESFET is also found to increase with temperature. The cut-ott frequency, fT’ of a diamond MESFET at 923 K is comparable with that of a GaAs MESFET at room temperature. It is concluded that microwave power applications of MESFET’s in p-type diamond but otherwise conventional design is limited to high temperature.
| Original language | English |
|---|---|
| Title of host publication | High-Temperature Electronics |
| Publisher | Wiley-IEEE Press |
| Pages | 478-480 |
| Number of pages | 3 |
| ISBN (Electronic) | 9780470544884 |
| ISBN (Print) | 0780334779, 9780780334779 |
| DOIs | |
| Publication status | Published - 1998 Jan 1 |
Bibliographical note
Publisher Copyright:© 1999 by the Institute of Electrical and Electronics Engineers, Inc.
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Computer Science(all)
- Materials Science(all)