TY - JOUR
T1 - High-temperature corrosion resistance of chemically vapor deposited silicon carbide against hydrogen chloride and hydrogen gaseous environments
AU - Kim, Dong Joo
AU - Choi, Doo Jin
PY - 1996
Y1 - 1996
N2 - Silicon carbide (SiC) films deposited by chemical vapor deposition were exposed to hydrogen chloride and hydrogen gaseous mixture (5% HCl and 95% H2) at 1200°C with a total pressure of 101 kPa in order to investigate their durability against the corrosive gas. Corrosion resistance against the HCl and H2 gaseous mixture was related to the microstructure and preferred orientation of the SiC films, which depend on the deposition conditions. The stratified structure with a small crystallite had higher corrosion resistance than the faceted columnar structure, and (111) oriented films had higher resistance than (220) oriented films.
AB - Silicon carbide (SiC) films deposited by chemical vapor deposition were exposed to hydrogen chloride and hydrogen gaseous mixture (5% HCl and 95% H2) at 1200°C with a total pressure of 101 kPa in order to investigate their durability against the corrosive gas. Corrosion resistance against the HCl and H2 gaseous mixture was related to the microstructure and preferred orientation of the SiC films, which depend on the deposition conditions. The stratified structure with a small crystallite had higher corrosion resistance than the faceted columnar structure, and (111) oriented films had higher resistance than (220) oriented films.
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U2 - 10.1111/j.1151-2916.1996.tb08153.x
DO - 10.1111/j.1151-2916.1996.tb08153.x
M3 - Article
AN - SCOPUS:0030084088
SN - 0002-7820
VL - 79
SP - 503
EP - 506
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
IS - 2
ER -