High stability of inkjet printed indium zinc oxide thin film transistors

Kyung Bae Park; Myung Kwan Ryu; Jong Baek Seon; Kwang Hee Lee; Sang Yoon Lee; Woong Hee Jeong; Jung Hyun Bae; Hyun Jae Kim

High stability of inkjet printed indium zinc oxide thin film transistors

Kyung Bae Park, Myung Kwan Ryu, Jong Baek Seon, Kwang Hee Lee, Sang Yoon Lee, Woong Hee Jeong, Jung Hyun Bae, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

We report the fabrication of solution-processed Indium zinc oxide(IZO) transistors using inkjet printing. A IZO ink was prepared by dissolving indium nitrate, zinc acetate into 2-methoxyethanol. The compositions of dropped IZO films have high stoichiometric characteristics with low carbon impurity. Depletion mode IZO field effect transistors were fabricated showing a field-effect mobility of 0.2cm²/Vs. An electrically and thermally biased stability showed a threshold voltage deviation of 1.46V for 3hours.

Original language	English
Pages	1837-1838
Number of pages	2
Publication status	Published - 2010
Event	17th International Display Workshops, IDW'10 - Fukuoka, Japan Duration: 2010 Dec 1 → 2010 Dec 3

Other

Other	17th International Display Workshops, IDW'10
Country/Territory	Japan
City	Fukuoka
Period	10/12/1 → 10/12/3

All Science Journal Classification (ASJC) codes

Computer Vision and Pattern Recognition
Human-Computer Interaction

Cite this

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title = "High stability of inkjet printed indium zinc oxide thin film transistors",

abstract = "We report the fabrication of solution-processed Indium zinc oxide(IZO) transistors using inkjet printing. A IZO ink was prepared by dissolving indium nitrate, zinc acetate into 2-methoxyethanol. The compositions of dropped IZO films have high stoichiometric characteristics with low carbon impurity. Depletion mode IZO field effect transistors were fabricated showing a field-effect mobility of 0.2cm2/Vs. An electrically and thermally biased stability showed a threshold voltage deviation of 1.46V for 3hours.",

author = "Park, {Kyung Bae} and Ryu, {Myung Kwan} and Seon, {Jong Baek} and Lee, {Kwang Hee} and Lee, {Sang Yoon} and Jeong, {Woong Hee} and Bae, {Jung Hyun} and Kim, {Hyun Jae}",

year = "2010",

language = "English",

pages = "1837--1838",

note = "17th International Display Workshops, IDW'10 ; Conference date: 01-12-2010 Through 03-12-2010",

}

TY - CONF

T1 - High stability of inkjet printed indium zinc oxide thin film transistors

AU - Park, Kyung Bae

AU - Ryu, Myung Kwan

AU - Seon, Jong Baek

AU - Lee, Kwang Hee

AU - Lee, Sang Yoon

AU - Jeong, Woong Hee

AU - Bae, Jung Hyun

AU - Kim, Hyun Jae

PY - 2010

Y1 - 2010

N2 - We report the fabrication of solution-processed Indium zinc oxide(IZO) transistors using inkjet printing. A IZO ink was prepared by dissolving indium nitrate, zinc acetate into 2-methoxyethanol. The compositions of dropped IZO films have high stoichiometric characteristics with low carbon impurity. Depletion mode IZO field effect transistors were fabricated showing a field-effect mobility of 0.2cm2/Vs. An electrically and thermally biased stability showed a threshold voltage deviation of 1.46V for 3hours.

AB - We report the fabrication of solution-processed Indium zinc oxide(IZO) transistors using inkjet printing. A IZO ink was prepared by dissolving indium nitrate, zinc acetate into 2-methoxyethanol. The compositions of dropped IZO films have high stoichiometric characteristics with low carbon impurity. Depletion mode IZO field effect transistors were fabricated showing a field-effect mobility of 0.2cm2/Vs. An electrically and thermally biased stability showed a threshold voltage deviation of 1.46V for 3hours.

UR - http://www.scopus.com/inward/record.url?scp=79956314388&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956314388&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79956314388

SP - 1837

EP - 1838

T2 - 17th International Display Workshops, IDW'10

Y2 - 1 December 2010 through 3 December 2010

ER -

High stability of inkjet printed indium zinc oxide thin film transistors

Abstract

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All Science Journal Classification (ASJC) codes

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