High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates

Jong Hyun Ahn; Hoon Sik Kim; Keon Jae Lee; Zhengtao Zhu; Etienne Menard; Ralph G. Nuzzo; John A. Rogers

doi:10.1109/LED.2006.874764

High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates

Jong Hyun Ahn, Hoon Sik Kim, Keon Jae Lee, Zhengtao Zhu, Etienne Menard, Ralph G. Nuzzo, John A. Rogers

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

161 Citations (Scopus)

Abstract

This letter describes the fabrication and properties of bendable single-crystal-silicon thin film transistors formed on plastic substrates. These devices use ultrathin single-crystal silicon ribbons for the semiconductor, with optimized device layouts and low-temperature gate dielectrics. The level of performance that can be achieved approaches that of traditional silicon transistors on rigid bulk wafers: effective mobilities > 500 cm²/V · s, ON/OFF ratios > 10⁵, and response frequencies > 500 MHz at channel lengths of 2 μm. This type of device might provide a promising route to flexible digital circuits for classes of applications whose performance requirements cannot be satisfied with organic semiconductors, amorphous silicon, or other related approaches.

Original language	English
Pages (from-to)	460-462
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	6
DOIs	https://doi.org/10.1109/LED.2006.874764
Publication status	Published - 2006 Jun

Bibliographical note

Funding Information:
Manuscript received February 9, 2006; revised March 13, 2006. This work was supported in part by the Defense Advanced Projects Agency under Contract F8650-04-C-710 and by the U.S. Department of Energy under Grant DEFG02-91-ER45439. Devices were fabricated using the Frederick Seitz Materials Research Laboratory facilities and were characterized in the Center for Microanalysis of Materials, both of which are supported in part by the U.S. Department of Energy under Grant DEFG02-91-ER45439. The review of this letter was arranged by Editor J. Sin.

Funding Information:
J.-H. Ahn would like to thank Prof. J.-C. Jung and Prof. W.-C. Zin at POSTECH, Korea, for the valuable discussions on polyimide and the Korea Research Foundation (KRF) for the postdoctoral fellowship support (M01-2004-000-20108-0). H.-S. Kim would like to thank Prof. E. Rosenbaum at University of Illinois at Urbana-Champaign (UIUC) for the valuable discussions on device physics.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2006.874764

Cite this

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title = "High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates",

abstract = "This letter describes the fabrication and properties of bendable single-crystal-silicon thin film transistors formed on plastic substrates. These devices use ultrathin single-crystal silicon ribbons for the semiconductor, with optimized device layouts and low-temperature gate dielectrics. The level of performance that can be achieved approaches that of traditional silicon transistors on rigid bulk wafers: effective mobilities > 500 cm2/V · s, ON/OFF ratios > 105, and response frequencies > 500 MHz at channel lengths of 2 μm. This type of device might provide a promising route to flexible digital circuits for classes of applications whose performance requirements cannot be satisfied with organic semiconductors, amorphous silicon, or other related approaches.",

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AU - Nuzzo, Ralph G.

AU - Rogers, John A.

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High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates

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