This letter describes the fabrication and properties of bendable single-crystal-silicon thin film transistors formed on plastic substrates. These devices use ultrathin single-crystal silicon ribbons for the semiconductor, with optimized device layouts and low-temperature gate dielectrics. The level of performance that can be achieved approaches that of traditional silicon transistors on rigid bulk wafers: effective mobilities > 500 cm2/V · s, ON/OFF ratios > 105, and response frequencies > 500 MHz at channel lengths of 2 μm. This type of device might provide a promising route to flexible digital circuits for classes of applications whose performance requirements cannot be satisfied with organic semiconductors, amorphous silicon, or other related approaches.
Bibliographical noteFunding Information:
Manuscript received February 9, 2006; revised March 13, 2006. This work was supported in part by the Defense Advanced Projects Agency under Contract F8650-04-C-710 and by the U.S. Department of Energy under Grant DEFG02-91-ER45439. Devices were fabricated using the Frederick Seitz Materials Research Laboratory facilities and were characterized in the Center for Microanalysis of Materials, both of which are supported in part by the U.S. Department of Energy under Grant DEFG02-91-ER45439. The review of this letter was arranged by Editor J. Sin.
J.-H. Ahn would like to thank Prof. J.-C. Jung and Prof. W.-C. Zin at POSTECH, Korea, for the valuable discussions on polyimide and the Korea Research Foundation (KRF) for the postdoctoral fellowship support (M01-2004-000-20108-0). H.-S. Kim would like to thank Prof. E. Rosenbaum at University of Illinois at Urbana-Champaign (UIUC) for the valuable discussions on device physics.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering