High Speed and High Reliability InP/InGaAs Avalanche Photodiode for Optical Communications

Kyung Sook Hyun; Youngmi Paek; Yong Hwan Kwon; Ilgu Yun; El Hang Lee

doi:10.1117/12.479551

High Speed and High Reliability InP/InGaAs Avalanche Photodiode for Optical Communications

Kyung Sook Hyun, Youngmi Paek, Yong Hwan Kwon, Ilgu Yun, El Hang Lee

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

We present a review of the characteristics of several different types of high speed InGaAs/InP avalanche photodiode (APD)s that we have developed for different guard ring depth and for different main p-n junction shape. The APD structure that we propose consists of a greatly reduced width in InP multiplication layer and a high doping concentrated electric field buffer layer, where we also adopted a floating guard ring and a shaped main junction with recess etching for a reliable operation of an APD. We obtained high reliability APDs, which are tested for two-dimensional gain behavior and for accelerated life tests by monitoring dark current and breakdown voltage. The gain and bandwidth product of the best of our APDs was measured as high as 80 GHz.

Original language	English
Pages (from-to)	130-137
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4999
DOIs	https://doi.org/10.1117/12.479551
Publication status	Published - 2003
Event	Quantum Sensing: Evolution and Revolution from Past to Future - San Jose, CA, United States Duration: 2003 Jan 27 → 2003 Jan 30

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "High Speed and High Reliability InP/InGaAs Avalanche Photodiode for Optical Communications",

abstract = "We present a review of the characteristics of several different types of high speed InGaAs/InP avalanche photodiode (APD)s that we have developed for different guard ring depth and for different main p-n junction shape. The APD structure that we propose consists of a greatly reduced width in InP multiplication layer and a high doping concentrated electric field buffer layer, where we also adopted a floating guard ring and a shaped main junction with recess etching for a reliable operation of an APD. We obtained high reliability APDs, which are tested for two-dimensional gain behavior and for accelerated life tests by monitoring dark current and breakdown voltage. The gain and bandwidth product of the best of our APDs was measured as high as 80 GHz.",

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journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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T1 - High Speed and High Reliability InP/InGaAs Avalanche Photodiode for Optical Communications

AU - Hyun, Kyung Sook

AU - Paek, Youngmi

AU - Kwon, Yong Hwan

AU - Yun, Ilgu

AU - Lee, El Hang

PY - 2003

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N2 - We present a review of the characteristics of several different types of high speed InGaAs/InP avalanche photodiode (APD)s that we have developed for different guard ring depth and for different main p-n junction shape. The APD structure that we propose consists of a greatly reduced width in InP multiplication layer and a high doping concentrated electric field buffer layer, where we also adopted a floating guard ring and a shaped main junction with recess etching for a reliable operation of an APD. We obtained high reliability APDs, which are tested for two-dimensional gain behavior and for accelerated life tests by monitoring dark current and breakdown voltage. The gain and bandwidth product of the best of our APDs was measured as high as 80 GHz.

AB - We present a review of the characteristics of several different types of high speed InGaAs/InP avalanche photodiode (APD)s that we have developed for different guard ring depth and for different main p-n junction shape. The APD structure that we propose consists of a greatly reduced width in InP multiplication layer and a high doping concentrated electric field buffer layer, where we also adopted a floating guard ring and a shaped main junction with recess etching for a reliable operation of an APD. We obtained high reliability APDs, which are tested for two-dimensional gain behavior and for accelerated life tests by monitoring dark current and breakdown voltage. The gain and bandwidth product of the best of our APDs was measured as high as 80 GHz.

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Quantum Sensing: Evolution and Revolution from Past to Future

Y2 - 27 January 2003 through 30 January 2003

ER -

High Speed and High Reliability InP/InGaAs Avalanche Photodiode for Optical Communications

Abstract

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