High-rate SiO₂ deposition by oxygen cold arc plasma jet at atmospheric pressure

SiO₂ thin films were deposited by a cold arc plasma jet at atmospheric pressure. The cold arc plasma jet was operated with O₂ gas of 30 L · min^-1, while a He/TEOS mixture of 1 000 sccm was added to the plume of the plasma jet as a precursor. The plasma jet was continuously moved in the xy direction for uniform film thickness. The deposition rate at various conditions was studied by controlling the substrate distance, precursor inlet position, and substrate temperature; the physical and chemical properties of the films were characterized by SEM and XPS. A high deposition rate was attained using the cold arc plasma jet deposition system in open air; it is suggested that this originates from the abundant oxygen atoms produced in the cold arc plasma jet. A figure is presented.