High quality graphene-semiconducting oxide heterostructure for inverted organic photovoltaics

Kyung Sik Shin, Hanggochnuri Jo, Hyeon Jin Shin, Won Mook Choi, Jae Young Choi, Sang Woo Kim

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)

Abstract

In this work, we demonstrate damage-free direct growth of high-quality semiconducting ZnO thin films on thermal chemical vapor deposition (CVD)-grown graphene transferred onto a plastic substrate. A mist pyrolysis CVD (MPCVD) method based on a non-vacuum process at a low growth temperature of 160 °C is introduced for the successful direct growth of ZnO on graphene without any additional treatments or processes. ZnO thin films that did not exhibit damage to the structural and electrical properties of graphene were successfully grown on graphene. The MPCVD-grown ZnO thin films revealed more uniform surface morphology and better structural property than ZnO thin films deposited using sol-gel and sputtering. Using the ZnO/graphene heterostructure, we fabricated bulk heterojunction inverted organic photovoltaics with a power conversion efficiency of 1.55%.

Original languageEnglish
Pages (from-to)13032-13038
Number of pages7
JournalJournal of Materials Chemistry
Volume22
Issue number26
DOIs
Publication statusPublished - 2012 Jul 14

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Materials Chemistry

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