High quality gate insulator for very-low temperature poly-Si TFT employing nitrous oxygen plasma pre-treatment

Moon Young Shin; Sang Myeon Han; Min Cheol Lee; Hee Sun Shin; Min Koo Han; Jang Yeon Kwon; Takashi Noguchi

doi:10.1557/proc-814-i7.9

High quality gate insulator for very-low temperature poly-Si TFT employing nitrous oxygen plasma pre-treatment

Moon Young Shin, Sang Myeon Han, Min Cheol Lee, Hee Sun Shin, Min Koo Han, Jang Yeon Kwon, Takashi Noguchi

School of Integrated Technology

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

We have proposed nitrous oxide (N₂O) plasma pro-treatment in order to reduce the oxide charge densities as well as to increase the breakdown field of silicon dioxide film for flexible display. Our experimental results show that the proposed treatment improved both the flat-band voltage from -3V to -1.8V and the breakdown voltage of gate oxide from 7MV/cm to 9.5MV/cm, respectively. The proposed treatment also improved poly-Si TFT characteristics such as low sub-threshold swing of 0.43V/dec.

Original language	English
Pages (from-to)	157-162
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	814
DOIs	https://doi.org/10.1557/proc-814-i7.9
Publication status	Published - 2004
Event	Flexible Electronics 2004 - Materials and Device Technology - San Francisco, CA, United States Duration: 2004 Apr 13 → 2004 Apr 16

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "High quality gate insulator for very-low temperature poly-Si TFT employing nitrous oxygen plasma pre-treatment",

abstract = "We have proposed nitrous oxide (N2O) plasma pro-treatment in order to reduce the oxide charge densities as well as to increase the breakdown field of silicon dioxide film for flexible display. Our experimental results show that the proposed treatment improved both the flat-band voltage from -3V to -1.8V and the breakdown voltage of gate oxide from 7MV/cm to 9.5MV/cm, respectively. The proposed treatment also improved poly-Si TFT characteristics such as low sub-threshold swing of 0.43V/dec.",

author = "Shin, {Moon Young} and Han, {Sang Myeon} and Lee, {Min Cheol} and Shin, {Hee Sun} and Han, {Min Koo} and Kwon, {Jang Yeon} and Takashi Noguchi",

year = "2004",

doi = "10.1557/proc-814-i7.9",

language = "English",

volume = "814",

pages = "157--162",

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note = "Flexible Electronics 2004 - Materials and Device Technology ; Conference date: 13-04-2004 Through 16-04-2004",

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TY - JOUR

T1 - High quality gate insulator for very-low temperature poly-Si TFT employing nitrous oxygen plasma pre-treatment

AU - Shin, Moon Young

AU - Han, Sang Myeon

AU - Lee, Min Cheol

AU - Shin, Hee Sun

AU - Han, Min Koo

AU - Kwon, Jang Yeon

AU - Noguchi, Takashi

PY - 2004

Y1 - 2004

N2 - We have proposed nitrous oxide (N2O) plasma pro-treatment in order to reduce the oxide charge densities as well as to increase the breakdown field of silicon dioxide film for flexible display. Our experimental results show that the proposed treatment improved both the flat-band voltage from -3V to -1.8V and the breakdown voltage of gate oxide from 7MV/cm to 9.5MV/cm, respectively. The proposed treatment also improved poly-Si TFT characteristics such as low sub-threshold swing of 0.43V/dec.

AB - We have proposed nitrous oxide (N2O) plasma pro-treatment in order to reduce the oxide charge densities as well as to increase the breakdown field of silicon dioxide film for flexible display. Our experimental results show that the proposed treatment improved both the flat-band voltage from -3V to -1.8V and the breakdown voltage of gate oxide from 7MV/cm to 9.5MV/cm, respectively. The proposed treatment also improved poly-Si TFT characteristics such as low sub-threshold swing of 0.43V/dec.

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AN - SCOPUS:12844283899

SN - 0272-9172

VL - 814

SP - 157

EP - 162

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Flexible Electronics 2004 - Materials and Device Technology

Y2 - 13 April 2004 through 16 April 2004

ER -

High quality gate insulator for very-low temperature poly-Si TFT employing nitrous oxygen plasma pre-treatment

Abstract

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