High-quality cobalt thin films by plasma-enhanced atomic layer deposition

Han Bo Ram Lee; H. Kim

doi:10.1149/1.2338777

High-quality cobalt thin films by plasma-enhanced atomic layer deposition

Han Bo Ram Lee, H. Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

94 Citations (Scopus)

Abstract

High-quality Co films with low resistivity (10 μΩ cm) were deposited by plasma-enhanced atomic layer deposition (PE-ALD) from metallorganic precursors and NH₃ plasma. The deposition characteristics and film properties were investigated. Especially, we compared the results using two cyclopentadienyl Co precursors, CoCp(CO)₂ and CoCp₂. While low resistivity Co films were deposited by both precursors, much better self-limiting behavior was observed for CoCp₂. Rutherford backscattering and X-ray photoelectron spectroscopy analysis have shown that the impurity contents in PE-ALD Co film were very low. CoSi₂ formation by post deposition annealing with Ti capping layer was studied by synchrotron X-ray diffraction.

Original language	English
Pages (from-to)	G323-G325
Journal	Electrochemical and Solid-State Letters
Volume	9
Issue number	11
DOIs	https://doi.org/10.1149/1.2338777
Publication status	Published - 2006

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.2338777

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abstract = "High-quality Co films with low resistivity (10 μΩ cm) were deposited by plasma-enhanced atomic layer deposition (PE-ALD) from metallorganic precursors and NH3 plasma. The deposition characteristics and film properties were investigated. Especially, we compared the results using two cyclopentadienyl Co precursors, CoCp(CO)2 and CoCp2. While low resistivity Co films were deposited by both precursors, much better self-limiting behavior was observed for CoCp2. Rutherford backscattering and X-ray photoelectron spectroscopy analysis have shown that the impurity contents in PE-ALD Co film were very low. CoSi2 formation by post deposition annealing with Ti capping layer was studied by synchrotron X-ray diffraction.",

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AB - High-quality Co films with low resistivity (10 μΩ cm) were deposited by plasma-enhanced atomic layer deposition (PE-ALD) from metallorganic precursors and NH3 plasma. The deposition characteristics and film properties were investigated. Especially, we compared the results using two cyclopentadienyl Co precursors, CoCp(CO)2 and CoCp2. While low resistivity Co films were deposited by both precursors, much better self-limiting behavior was observed for CoCp2. Rutherford backscattering and X-ray photoelectron spectroscopy analysis have shown that the impurity contents in PE-ALD Co film were very low. CoSi2 formation by post deposition annealing with Ti capping layer was studied by synchrotron X-ray diffraction.

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High-quality cobalt thin films by plasma-enhanced atomic layer deposition

Abstract

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