High quality area-selective atomic layer deposition co using ammonia gas as a reactant

Han Bo Ram Lee; Woo Hee Kim; Jeong Won Lee; Jae Min Kim; Kwang Heo; In Chan Hwang; Yongjun Park; Seunghun Hong; Hyungjun Kim

doi:10.1149/1.3248002

High quality area-selective atomic layer deposition co using ammonia gas as a reactant

Han Bo Ram Lee, Woo Hee Kim, Jeong Won Lee, Jae Min Kim, Kwang Heo, In Chan Hwang, Yongjun Park, Seunghun Hong, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

63 Citations (Scopus)

Abstract

Atomic layer deposition (ALD) Co was developed using bis(N, N′ -diisopropylacetamidinato)cobalt(II) as a precursor and NH₃ as a reactant, producing pure Co thin films with excellent conformality and nanoscale thickness controllability. In addition to NH₃, the Co films were also deposited by using H₂ gas as a reactant. Compared to ALD Co using H₂, the Co thin films deposited by NH₃ showed a higher film quality, a lower resistivity, and a higher density. The Co thermal ALD process was applied to area-selective ALD using an octadecyltrichlorosilane self-assembled monolayer as a blocking layer, which produced 3 μm wide Co line patterns without an etching process.

Original language	English
Pages (from-to)	D10-D15
Journal	Journal of the Electrochemical Society
Volume	157
Issue number	1
DOIs	https://doi.org/10.1149/1.3248002
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrochemistry
Renewable Energy, Sustainability and the Environment

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.3248002

Cite this

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title = "High quality area-selective atomic layer deposition co using ammonia gas as a reactant",

abstract = "Atomic layer deposition (ALD) Co was developed using bis(N, N′ -diisopropylacetamidinato)cobalt(II) as a precursor and NH3 as a reactant, producing pure Co thin films with excellent conformality and nanoscale thickness controllability. In addition to NH3, the Co films were also deposited by using H2 gas as a reactant. Compared to ALD Co using H2, the Co thin films deposited by NH3 showed a higher film quality, a lower resistivity, and a higher density. The Co thermal ALD process was applied to area-selective ALD using an octadecyltrichlorosilane self-assembled monolayer as a blocking layer, which produced 3 μm wide Co line patterns without an etching process.",

author = "Lee, {Han Bo Ram} and Kim, {Woo Hee} and Lee, {Jeong Won} and Kim, {Jae Min} and Kwang Heo and Hwang, {In Chan} and Yongjun Park and Seunghun Hong and Hyungjun Kim",

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doi = "10.1149/1.3248002",

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T1 - High quality area-selective atomic layer deposition co using ammonia gas as a reactant

AU - Lee, Han Bo Ram

AU - Kim, Woo Hee

AU - Lee, Jeong Won

AU - Kim, Jae Min

AU - Heo, Kwang

AU - Hwang, In Chan

AU - Park, Yongjun

AU - Hong, Seunghun

AU - Kim, Hyungjun

PY - 2010

Y1 - 2010

N2 - Atomic layer deposition (ALD) Co was developed using bis(N, N′ -diisopropylacetamidinato)cobalt(II) as a precursor and NH3 as a reactant, producing pure Co thin films with excellent conformality and nanoscale thickness controllability. In addition to NH3, the Co films were also deposited by using H2 gas as a reactant. Compared to ALD Co using H2, the Co thin films deposited by NH3 showed a higher film quality, a lower resistivity, and a higher density. The Co thermal ALD process was applied to area-selective ALD using an octadecyltrichlorosilane self-assembled monolayer as a blocking layer, which produced 3 μm wide Co line patterns without an etching process.

AB - Atomic layer deposition (ALD) Co was developed using bis(N, N′ -diisopropylacetamidinato)cobalt(II) as a precursor and NH3 as a reactant, producing pure Co thin films with excellent conformality and nanoscale thickness controllability. In addition to NH3, the Co films were also deposited by using H2 gas as a reactant. Compared to ALD Co using H2, the Co thin films deposited by NH3 showed a higher film quality, a lower resistivity, and a higher density. The Co thermal ALD process was applied to area-selective ALD using an octadecyltrichlorosilane self-assembled monolayer as a blocking layer, which produced 3 μm wide Co line patterns without an etching process.

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High quality area-selective atomic layer deposition co using ammonia gas as a reactant

Abstract

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