High quality area-selective atomic layer deposition co using ammonia gas as a reactant

Han Bo Ram Lee, Woo Hee Kim, Jeong Won Lee, Jae Min Kim, Kwang Heo, In Chan Hwang, Yongjun Park, Seunghun Hong, Hyungjun Kim

Research output: Contribution to journalArticlepeer-review

63 Citations (Scopus)


Atomic layer deposition (ALD) Co was developed using bis(N, N′ -diisopropylacetamidinato)cobalt(II) as a precursor and NH3 as a reactant, producing pure Co thin films with excellent conformality and nanoscale thickness controllability. In addition to NH3, the Co films were also deposited by using H2 gas as a reactant. Compared to ALD Co using H2, the Co thin films deposited by NH3 showed a higher film quality, a lower resistivity, and a higher density. The Co thermal ALD process was applied to area-selective ALD using an octadecyltrichlorosilane self-assembled monolayer as a blocking layer, which produced 3 μm wide Co line patterns without an etching process.

Original languageEnglish
Pages (from-to)D10-D15
JournalJournal of the Electrochemical Society
Issue number1
Publication statusPublished - 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Renewable Energy, Sustainability and the Environment


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