High potential barrier effects on self-assembled InAs quantum dots

S. I. Jung; H. Y. Yeo; I. Yun; J. Y. Leem; S. M. Cho; J. S. Kim; J. I. Lee

doi:10.3938/jkps.50.767

High potential barrier effects on self-assembled InAs quantum dots

S. I. Jung, H. Y. Yeo, I. Yun, J. Y. Leem, S. M. Cho, J. S. Kim, J. I. Lee

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The effects of an AlAs layer with different positions and thicknesses on self-assembled InAs quantum dots (QDs) have been investigated by using transmission electron microscopy and photoluminescence (PL). The emission peak position of InAs QDs directly grown on an AlAs layer is blueshifted from that of InAs QDs grown on a GaAs layer without any significant loss of the QD qualities. However, the PL peak position of InAs QDs grown under an AlAs layer does not vary. This result is related to the high potential barrier, the reduced dot size, and the interdiffusion of Al atom at the InAs QDs during growing the InAs QDs on an AlAs layer.

Original language	English
Pages (from-to)	767-770
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	50
Issue number	3
DOIs	https://doi.org/10.3938/jkps.50.767
Publication status	Published - 2007 Mar

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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title = "High potential barrier effects on self-assembled InAs quantum dots",

abstract = "The effects of an AlAs layer with different positions and thicknesses on self-assembled InAs quantum dots (QDs) have been investigated by using transmission electron microscopy and photoluminescence (PL). The emission peak position of InAs QDs directly grown on an AlAs layer is blueshifted from that of InAs QDs grown on a GaAs layer without any significant loss of the QD qualities. However, the PL peak position of InAs QDs grown under an AlAs layer does not vary. This result is related to the high potential barrier, the reduced dot size, and the interdiffusion of Al atom at the InAs QDs during growing the InAs QDs on an AlAs layer.",

author = "Jung, {S. I.} and Yeo, {H. Y.} and I. Yun and Leem, {J. Y.} and Cho, {S. M.} and Kim, {J. S.} and Lee, {J. I.}",

year = "2007",

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doi = "10.3938/jkps.50.767",

language = "English",

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TY - JOUR

T1 - High potential barrier effects on self-assembled InAs quantum dots

AU - Jung, S. I.

AU - Yeo, H. Y.

AU - Yun, I.

AU - Leem, J. Y.

AU - Cho, S. M.

AU - Kim, J. S.

AU - Lee, J. I.

PY - 2007/3

Y1 - 2007/3

N2 - The effects of an AlAs layer with different positions and thicknesses on self-assembled InAs quantum dots (QDs) have been investigated by using transmission electron microscopy and photoluminescence (PL). The emission peak position of InAs QDs directly grown on an AlAs layer is blueshifted from that of InAs QDs grown on a GaAs layer without any significant loss of the QD qualities. However, the PL peak position of InAs QDs grown under an AlAs layer does not vary. This result is related to the high potential barrier, the reduced dot size, and the interdiffusion of Al atom at the InAs QDs during growing the InAs QDs on an AlAs layer.

AB - The effects of an AlAs layer with different positions and thicknesses on self-assembled InAs quantum dots (QDs) have been investigated by using transmission electron microscopy and photoluminescence (PL). The emission peak position of InAs QDs directly grown on an AlAs layer is blueshifted from that of InAs QDs grown on a GaAs layer without any significant loss of the QD qualities. However, the PL peak position of InAs QDs grown under an AlAs layer does not vary. This result is related to the high potential barrier, the reduced dot size, and the interdiffusion of Al atom at the InAs QDs during growing the InAs QDs on an AlAs layer.

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JO - Journal of the Korean Physical Society

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High potential barrier effects on self-assembled InAs quantum dots

Abstract

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