High-performance ZnO thin-film transistor fabricated by atomic layer deposition

Byeong Yun Oh; Young Hwan Kim; Hee Jun Lee; Byoung Yong Kim; Hong Gyu Park; Jin Woo Han; Gi Seok Heo; Tae Won Kim; Kwang Young Kim; Dae Shik Seo

doi:10.1088/0268-1242/26/8/085007

High-performance ZnO thin-film transistor fabricated by atomic layer deposition

Byeong Yun Oh, Young Hwan Kim, Hee Jun Lee, Byoung Yong Kim, Hong Gyu Park, Jin Woo Han, Gi Seok Heo, Tae Won Kim, Kwang Young Kim, Dae Shik Seo

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

We report the fabrication and characteristics of a ZnO thin-film transistor (TFT) using a 50 nm thick ZnO film as an active layer on an Al ₂O₃ gate dielectric film deposited by atomic layer deposition. Lowering the deposition temperature allowed the control of the carrier concentration of the active channel layer (ZnO film) in the TFT device. The ZnO TFT fabricated at 110 °C exhibited high-performance TFT characteristics including a saturation field-effect mobility of 11.86 cm ² V^-1 s^-1, an on-to-off current ratio of 3.09 × 10⁷ and a sub-threshold gate-voltage swing of 0.72 V decade^-1.

Original language	English
Article number	085007
Journal	Semiconductor Science and Technology
Volume	26
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/26/8/085007
Publication status	Published - 2011 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/26/8/085007

Cite this

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title = "High-performance ZnO thin-film transistor fabricated by atomic layer deposition",

abstract = "We report the fabrication and characteristics of a ZnO thin-film transistor (TFT) using a 50 nm thick ZnO film as an active layer on an Al 2O3 gate dielectric film deposited by atomic layer deposition. Lowering the deposition temperature allowed the control of the carrier concentration of the active channel layer (ZnO film) in the TFT device. The ZnO TFT fabricated at 110 °C exhibited high-performance TFT characteristics including a saturation field-effect mobility of 11.86 cm 2 V-1 s-1, an on-to-off current ratio of 3.09 × 107 and a sub-threshold gate-voltage swing of 0.72 V decade-1.",

author = "Oh, {Byeong Yun} and Kim, {Young Hwan} and Lee, {Hee Jun} and Kim, {Byoung Yong} and Park, {Hong Gyu} and Han, {Jin Woo} and Heo, {Gi Seok} and Kim, {Tae Won} and Kim, {Kwang Young} and Seo, {Dae Shik}",

year = "2011",

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doi = "10.1088/0268-1242/26/8/085007",

language = "English",

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T1 - High-performance ZnO thin-film transistor fabricated by atomic layer deposition

AU - Oh, Byeong Yun

AU - Kim, Young Hwan

AU - Lee, Hee Jun

AU - Kim, Byoung Yong

AU - Park, Hong Gyu

AU - Han, Jin Woo

AU - Heo, Gi Seok

AU - Kim, Tae Won

AU - Kim, Kwang Young

AU - Seo, Dae Shik

PY - 2011/8

Y1 - 2011/8

N2 - We report the fabrication and characteristics of a ZnO thin-film transistor (TFT) using a 50 nm thick ZnO film as an active layer on an Al 2O3 gate dielectric film deposited by atomic layer deposition. Lowering the deposition temperature allowed the control of the carrier concentration of the active channel layer (ZnO film) in the TFT device. The ZnO TFT fabricated at 110 °C exhibited high-performance TFT characteristics including a saturation field-effect mobility of 11.86 cm 2 V-1 s-1, an on-to-off current ratio of 3.09 × 107 and a sub-threshold gate-voltage swing of 0.72 V decade-1.

AB - We report the fabrication and characteristics of a ZnO thin-film transistor (TFT) using a 50 nm thick ZnO film as an active layer on an Al 2O3 gate dielectric film deposited by atomic layer deposition. Lowering the deposition temperature allowed the control of the carrier concentration of the active channel layer (ZnO film) in the TFT device. The ZnO TFT fabricated at 110 °C exhibited high-performance TFT characteristics including a saturation field-effect mobility of 11.86 cm 2 V-1 s-1, an on-to-off current ratio of 3.09 × 107 and a sub-threshold gate-voltage swing of 0.72 V decade-1.

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High-performance ZnO thin-film transistor fabricated by atomic layer deposition

Abstract

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