High performance transparent thin film transistor with atomic layer deposition ZnO based active channel layer

Hyungjun Kim, S. J. Lim, Jae Min Kim, Do Young Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)


In this paper, we present the current research efforts on the atomic layer deposition (ALD) ZnO based TFT devices carried out in our laboratory. ZnO thin film deposition was carried out by two different ALD processes; thermal ALD using water as a reactant and plasma-enhanced ALD using oxygen plasma as a reactant. The film properties were comparatively studied showing large difference in terms of electrical properties. For thermal ALD ZnO, carrier concentrations were too high to fabricate well-operated ZnO TFTs. To control the carrier concentration, nitrogen doping was utilized based on NH4OH reactant. Meanwhile, for PE-ALD, highly resistive films were obtained at low growth temperature below 200°C. To reduce the resistivity to a proper level for the fabrication of TFTs, UV-light exposure was used. At properly controlled conditions, high performance TFT devices were fabricated based on these processes. ZnO TFTs were also fabricated on flexible substrates and the initial research was carried out on the effects of device bending on device properties.

Original languageEnglish
Title of host publicationOxide-based Materials and Devices
Publication statusPublished - 2010
EventOxide-based Materials and Devices - San Francisco, CA, United States
Duration: 2010 Jan 242010 Jan 27

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherOxide-based Materials and Devices
Country/TerritoryUnited States
CitySan Francisco, CA

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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