TY - GEN
T1 - High performance self-aligned top-gate amorphous indium zinc oxide thin-film transistors
AU - Park, Jae Chul
AU - Kim, Chang Jung
AU - Im, Seongil
PY - 2013
Y1 - 2013
N2 - We clear the persistent inferiority, innovating the device performaces of a-IZO TFT by adopting self-aligned coplanar top-gate structure and modifying the surface of a-IZO material. Herein, we demonstrate a high performance simple-processed a-IZO TFT with the mobility of 116 cm2V 1s1 , SS of 190 mV dec1, and good bias stability. The mobility value is regarded to be the most superior among previously reported ones of AOS TFTs, to the best of our limited knowledge.
AB - We clear the persistent inferiority, innovating the device performaces of a-IZO TFT by adopting self-aligned coplanar top-gate structure and modifying the surface of a-IZO material. Herein, we demonstrate a high performance simple-processed a-IZO TFT with the mobility of 116 cm2V 1s1 , SS of 190 mV dec1, and good bias stability. The mobility value is regarded to be the most superior among previously reported ones of AOS TFTs, to the best of our limited knowledge.
UR - http://www.scopus.com/inward/record.url?scp=84887831647&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84887831647&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84887831647
SN - 9784863483118
T3 - Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013
SP - 247
EP - 250
BT - Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices
T2 - 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013
Y2 - 2 July 2013 through 5 July 2013
ER -