High performance poly-Si thin film transistor (μeff ∼ 258cm2/Vs) fabricated on plastic below 170°C

Ji Sim Jung; Do Young Kim; Jong Man Kim; Jang Yeon Kwon; Hyuck Lim; Hans S. Cho; Kyung Bae Park; Hyuck Lim; Takashi Noguchi

High performance poly-Si thin film transistor (μ_eff ∼ 258cm²/Vs) fabricated on plastic below 170°C

Ji Sim Jung, Do Young Kim, Jong Man Kim, Jang Yeon Kwon, Hyuck Lim, Hans S. Cho, Kyung Bae Park, Hyuck Lim, Takashi Noguchi

School of Integrated Technology

Research output: Contribution to conference › Paper › peer-review

Abstract

We present the characteristics of poly-Si TFT (Thin Film transistor) fabricated below. The field-effect mobility and sub-threshold swing of poly Si TFT were 258cm²/Vsec and 0.IV/dec respectively. For active layer, a-Si film deposited by Xe sputter was crystallized by ELA and SiO₂ film as gate oxide was formed by ICP CVD below 170oC.

Original language	English
Pages	438-440
Number of pages	3
Publication status	Published - 2005
Event	Second Americas Display Engineering and Applications Conference, ADEAC 2005 - Portland, OR, United States Duration: 2005 Oct 25 → 2005 Oct 27

Other

Other	Second Americas Display Engineering and Applications Conference, ADEAC 2005
Country/Territory	United States
City	Portland, OR
Period	05/10/25 → 05/10/27

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

@conference{0c389a0a40024149946acb1f8636253b,

title = "High performance poly-Si thin film transistor (μeff ∼ 258cm2/Vs) fabricated on plastic below 170°C",

abstract = "We present the characteristics of poly-Si TFT (Thin Film transistor) fabricated below. The field-effect mobility and sub-threshold swing of poly Si TFT were 258cm2/Vsec and 0.IV/dec respectively. For active layer, a-Si film deposited by Xe sputter was crystallized by ELA and SiO2 film as gate oxide was formed by ICP CVD below 170oC.",

author = "Jung, {Ji Sim} and Kim, {Do Young} and Kim, {Jong Man} and Kwon, {Jang Yeon} and Hyuck Lim and Cho, {Hans S.} and Park, {Kyung Bae} and Hyuck Lim and Takashi Noguchi",

year = "2005",

language = "English",

pages = "438--440",

note = "Second Americas Display Engineering and Applications Conference, ADEAC 2005 ; Conference date: 25-10-2005 Through 27-10-2005",

}

TY - CONF

T1 - High performance poly-Si thin film transistor (μeff ∼ 258cm2/Vs) fabricated on plastic below 170°C

AU - Jung, Ji Sim

AU - Kim, Do Young

AU - Kim, Jong Man

AU - Kwon, Jang Yeon

AU - Lim, Hyuck

AU - Cho, Hans S.

AU - Park, Kyung Bae

AU - Lim, Hyuck

AU - Noguchi, Takashi

PY - 2005

Y1 - 2005

N2 - We present the characteristics of poly-Si TFT (Thin Film transistor) fabricated below. The field-effect mobility and sub-threshold swing of poly Si TFT were 258cm2/Vsec and 0.IV/dec respectively. For active layer, a-Si film deposited by Xe sputter was crystallized by ELA and SiO2 film as gate oxide was formed by ICP CVD below 170oC.

AB - We present the characteristics of poly-Si TFT (Thin Film transistor) fabricated below. The field-effect mobility and sub-threshold swing of poly Si TFT were 258cm2/Vsec and 0.IV/dec respectively. For active layer, a-Si film deposited by Xe sputter was crystallized by ELA and SiO2 film as gate oxide was formed by ICP CVD below 170oC.

UR - http://www.scopus.com/inward/record.url?scp=33644749373&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644749373&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:33644749373

SP - 438

EP - 440

T2 - Second Americas Display Engineering and Applications Conference, ADEAC 2005

Y2 - 25 October 2005 through 27 October 2005

ER -

High performance poly-Si thin film transistor (μ_eff ∼ 258cm²/Vs) fabricated on plastic below 170°C

Abstract

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All Science Journal Classification (ASJC) codes

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