High performance pMOSFETs with Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate

Ja Hum Ku, C. J. Choi, S. Song, S. Choi, K. Fujihara, H. K. Kang, S. I. Lee, H. G. Choi, D. H. Ko

Research output: Contribution to journalConference articlepeer-review

Fingerprint

Dive into the research topics of 'High performance pMOSFETs with Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate'. Together they form a unique fingerprint.

Engineering

Material Science