High performance pMOSFETs with Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate

Ja Hum Ku, C. J. Choi, S. Song, S. Choi, K. Fujihara, H. K. Kang, S. I. Lee, H. G. Choi, D. H. Ko

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)


For the first time, Ni salicide process is applied directly on poly-Si0.8Ge0.2 gate, and pMOSFETs utilizing Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate are fully characterized. The excellent value (approximately 5 Ω/□) of sheet resistance is achieved from 0.15 μm Ni(SixGe1-x)/Si0.8Ge0.2 gate, while Co salicide process applied on Si0.8Ge0.2 gate results in Rs fail due to Ge segregation. It is also important to note that, with poly-Si0.8Ge0.2 gate and Ni salicide process, the current drivability of pMOSFETs is significantly improved due to less gate poly depletion and lower source-to-drain resistance(Rsd). Conclusively, Ni salicide is the exclusive process for successful germanosilicide formation on poly-Si0.8Ge0.2 gate without poly-Si buffer layer and Ni(SixGe1-x)/poly-Si0.8Ge0.2 gate can increase Idsat of pMOSFETs by 20% as compared to conventional CoSi2/poly-Si gate structure.

Original languageEnglish
Pages (from-to)114-115
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 2000
Event2000 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 2000 Jun 132000 Jun 15

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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