We report on the tetracene-based photo thin-film transistors (photo-TFTs) which adopt thin poly-4-vinylphenoi (PVP)/aluminum oxide (AlOx) bilayer and semitransparent NiOx for a gate dielectric and source/drain (S/D) electrode, respectively. Quite a large capacitance of 31 nF/cm2 was effectively achieved from the thin polymer/high-k oxide dielectric bilayer that also showed a high dielectric strength of ∼4 MV/cm. Our tetracene-based TFTs exhibited quite a good field effect mobility (∼0.23 cm2/V s) and a high on/off current ratio of ∼ 105, while operating at a voltage less than -8 V. The tetracene-TFTs demonstrated good static photoresponses to green (540 nm), blue (450 nm), and ultraviolet (364 nm) illuminations under the low voltage.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2006|
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering