High-performance low-temperature solution-processable ZnO thin film transistors by microwave-assisted annealing

Taehwan Jun, Keunkyu Song, Youngmin Jeong, Kyoohee Woo, Dongjo Kim, Changdeuck Bae, Jooho Moon

Research output: Contribution to journalArticlepeer-review

159 Citations (Scopus)


Oxide semiconductors afford a promising alternative to organic semiconductors and amorphous silicon materials in applications requiring transparent thin film transistors (TFTs). We synthesized an aqueous inorganic precursor by a direct dissolution of zinc hydroxide in ammonium hydroxide solution from which a dense and uniform ZnO semiconducting layer is achieved. Solution-processed ZnO-TFTs prepared at 140 °C by microwave irradiation have shown enhanced device characteristics of ∼1.7 cm2 V -1s-1 mobility and a ∼107 on/off current ratio, with good air stability. Spectroscopic analyses confirmed that such a device improvement originates from accelerated dehydroxylation and better crystallization at low temperature by microwave irradiation. Our results suggest that solution-processable oxide semiconductors have potential for low-temperature and high-performance applications in transparent devices.

Original languageEnglish
Pages (from-to)1102-1108
Number of pages7
JournalJournal of Materials Chemistry
Issue number4
Publication statusPublished - 2011 Jan 28

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Materials Chemistry


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