High-performance III-V devices for future logic applications

D. H. Kim; T. W. Kim; Rh Baek; P. D. Kirsch; W. Maszara; J. A. Del Alamo; D. A. Antoniadis; M. Urteaga; B. Brar; Hm Kwon; C. S. Shin; W. K. Park; Y. D. Cho; Sh Shin; Dh Ko; K. S. Seo

doi:10.1109/IEDM.2014.7047105

High-performance III-V devices for future logic applications

D. H. Kim, T. W. Kim, Rh Baek, P. D. Kirsch, W. Maszara, J. A. Del Alamo, D. A. Antoniadis, M. Urteaga, B. Brar, Hm Kwon, C. S. Shin, W. K. Park, Y. D. Cho, Sh Shin, Dh Ko, K. S. Seo

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Citations (Scopus)

Abstract

High-mobility III-V transistors are poised to take the lead on future high performance logic operation. If this happens, indium-rich In_xGa_1-xAs is the most promising n-channel material. Indeed, remarkable progress has been made, including III-V gate-stacks with ALD-grown gate dielectrics. This paper reviews the evolution of high-performance III-V devices for future logic applications and discuss a possible path forward to further improve their logic figure-of-merits.

Original language	English
Title of host publication	2014 IEEE International Electron Devices Meeting, IEDM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	25.2.1-25.2.4
Edition	February
ISBN (Electronic)	9781479980017
DOIs	https://doi.org/10.1109/IEDM.2014.7047105
Publication status	Published - 2015 Feb 20
Event	2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States Duration: 2014 Dec 15 → 2014 Dec 17

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Number	February
Volume	2015-February
ISSN (Print)	0163-1918

Other

Other	2014 60th IEEE International Electron Devices Meeting, IEDM 2014
Country/Territory	United States
City	San Francisco
Period	14/12/15 → 14/12/17

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2014.7047105

Cite this

Kim, D. H., Kim, T. W., Baek, R., Kirsch, P. D., Maszara, W., Del Alamo, J. A., Antoniadis, D. A., Urteaga, M., Brar, B., Kwon, H., Shin, C. S., Park, W. K., Cho, Y. D., Shin, S., Ko, D., & Seo, K. S. (2015). High-performance III-V devices for future logic applications. In 2014 IEEE International Electron Devices Meeting, IEDM 2014 (February ed., pp. 25.2.1-25.2.4). Article 7047105 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047105

@inproceedings{2835e36c434243c3a8cf5fea21fd1d8c,

title = "High-performance III-V devices for future logic applications",

abstract = "High-mobility III-V transistors are poised to take the lead on future high performance logic operation. If this happens, indium-rich InxGa1-xAs is the most promising n-channel material. Indeed, remarkable progress has been made, including III-V gate-stacks with ALD-grown gate dielectrics. This paper reviews the evolution of high-performance III-V devices for future logic applications and discuss a possible path forward to further improve their logic figure-of-merits.",

author = "Kim, {D. H.} and Kim, {T. W.} and Rh Baek and Kirsch, {P. D.} and W. Maszara and {Del Alamo}, {J. A.} and Antoniadis, {D. A.} and M. Urteaga and B. Brar and Hm Kwon and Shin, {C. S.} and Park, {W. K.} and Cho, {Y. D.} and Sh Shin and Dh Ko and Seo, {K. S.}",

year = "2015",

month = feb,

day = "20",

doi = "10.1109/IEDM.2014.7047105",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "February",

pages = "25.2.1--25.2.4",

booktitle = "2014 IEEE International Electron Devices Meeting, IEDM 2014",

address = "United States",

edition = "February",

note = "2014 60th IEEE International Electron Devices Meeting, IEDM 2014 ; Conference date: 15-12-2014 Through 17-12-2014",

}

Kim, DH, Kim, TW, Baek, R, Kirsch, PD, Maszara, W, Del Alamo, JA, Antoniadis, DA, Urteaga, M, Brar, B, Kwon, H, Shin, CS, Park, WK, Cho, YD, Shin, S, Ko, D & Seo, KS 2015, High-performance III-V devices for future logic applications. in 2014 IEEE International Electron Devices Meeting, IEDM 2014. February edn, 7047105, Technical Digest - International Electron Devices Meeting, IEDM, no. February, vol. 2015-February, Institute of Electrical and Electronics Engineers Inc., pp. 25.2.1-25.2.4, 2014 60th IEEE International Electron Devices Meeting, IEDM 2014, San Francisco, United States, 14/12/15. https://doi.org/10.1109/IEDM.2014.7047105

High-performance III-V devices for future logic applications. / Kim, D. H.; Kim, T. W.; Baek, Rh et al.
2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 25.2.1-25.2.4 7047105 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Kim, T. W.

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AU - Kirsch, P. D.

AU - Maszara, W.

AU - Del Alamo, J. A.

AU - Antoniadis, D. A.

AU - Urteaga, M.

AU - Brar, B.

AU - Kwon, Hm

AU - Shin, C. S.

AU - Park, W. K.

AU - Cho, Y. D.

AU - Shin, Sh

AU - Ko, Dh

AU - Seo, K. S.

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N2 - High-mobility III-V transistors are poised to take the lead on future high performance logic operation. If this happens, indium-rich InxGa1-xAs is the most promising n-channel material. Indeed, remarkable progress has been made, including III-V gate-stacks with ALD-grown gate dielectrics. This paper reviews the evolution of high-performance III-V devices for future logic applications and discuss a possible path forward to further improve their logic figure-of-merits.

AB - High-mobility III-V transistors are poised to take the lead on future high performance logic operation. If this happens, indium-rich InxGa1-xAs is the most promising n-channel material. Indeed, remarkable progress has been made, including III-V gate-stacks with ALD-grown gate dielectrics. This paper reviews the evolution of high-performance III-V devices for future logic applications and discuss a possible path forward to further improve their logic figure-of-merits.

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BT - 2014 IEEE International Electron Devices Meeting, IEDM 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 60th IEEE International Electron Devices Meeting, IEDM 2014

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ER -

Kim DH, Kim TW, Baek R, Kirsch PD, Maszara W, Del Alamo JA et al. High-performance III-V devices for future logic applications. In 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc. 2015. p. 25.2.1-25.2.4. 7047105. (Technical Digest - International Electron Devices Meeting, IEDM; February). doi: 10.1109/IEDM.2014.7047105

High-performance III-V devices for future logic applications

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