High-performance flexible graphene field effect transistors with ion gel gate dielectrics

Beom Joon Kim, Houk Jang, Seoung Ki Lee, Byung Hee Hong, Jong Hyun Ahn, Jeong Ho Cho

Research output: Contribution to journalArticlepeer-review

381 Citations (Scopus)


A high-performance low-voltage graphene field-effect transistor (FET) array was fabricated on a flexible polymer substrate using solution-processable, high-capacitance ion gel gate dielectrics. The high capacitance of the ion gel, which originated from the formation of an electric double layer under the application of a gate voltage, yielded a high on-current and low voltage operation below 3 V. The graphene FETs fabricated on the plastic substrates showed a hole and electron mobility of 203 ± 57 and 91 ± 50 cm2/(V•s), respectively, at a drain bias of -1 V. Moreover, ion gel gated graphene FETs on the plastic substrates exhibited remarkably good mechanical flexibility. This method represents a significant step in the application of graphene to flexible and stretchable electronics.

Original languageEnglish
Pages (from-to)3464-3466
Number of pages3
JournalNano letters
Issue number9
Publication statusPublished - 2010 Sept 8

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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