High-performance enhancement-mode In0.53Ga0.47As surface channels n-MOSFET with thin In0.2Ga0.8As capping and laser anneal effect

I. Ok; P. Y. Hung; D. Veksler; J. Oh; P. Majhi R. Jammy

doi:10.1109/ESSDERC.2010.5618407

High-performance enhancement-mode In_0.53Ga_0.47As surface channels n-MOSFET with thin In_0.2Ga_0.8As capping and laser anneal effect

I. Ok, P. Y. Hung, D. Veksler, J. Oh, P. Majhi R. Jammy

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work we have investigated the effect of thin In02Ga08As capping layer and pulsed laser annealing (PLA) on self-aligned enhancement mode n-channel In_0.53Ga_0.47As metal-oxide-semiconductor field effect transistor (MOSFET). We present the electrical and material characteristics of TaN/ZrO₂/In_0.2Ga_0.8As/ In_0.53Ga_0.47As n-MOSFET with atomic layer deposition (ALD) ZrO₂. Electrical characteristics with thin capacitance equivalent thickness (CET) (∼0.8 nm), and improved drain current with thin capping layer were obtained. N-channel high-k InGaAs-MOSFETs with good transistor behavior, i.e. improved drain current after additional pulsed laser anneal with RTA anneal, on In_0.53Ga_0.47As substrate have also been demonstrated.

Original language	English
Title of host publication	2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
Pages	166-169
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDERC.2010.5618407
Publication status	Published - 2010
Event	2010 European Solid State Device Research Conference, ESSDERC 2010 - Sevilla, Spain Duration: 2010 Sept 14 → 2010 Sept 16

Publication series

Name	2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Other

Other	2010 European Solid State Device Research Conference, ESSDERC 2010
Country/Territory	Spain
City	Sevilla
Period	10/9/14 → 10/9/16

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

Access to Document

10.1109/ESSDERC.2010.5618407

Cite this

Ok, I., Hung, P. Y., Veksler, D., Oh, J., & Jammy, P. M. R. (2010). High-performance enhancement-mode In_0.53Ga_0.47As surface channels n-MOSFET with thin In_0.2Ga_0.8As capping and laser anneal effect. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010 (pp. 166-169). [5618407] (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010). https://doi.org/10.1109/ESSDERC.2010.5618407

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title = "High-performance enhancement-mode In0.53Ga0.47As surface channels n-MOSFET with thin In0.2Ga0.8As capping and laser anneal effect",

abstract = "In this work we have investigated the effect of thin In02Ga08As capping layer and pulsed laser annealing (PLA) on self-aligned enhancement mode n-channel In0.53Ga0.47As metal-oxide-semiconductor field effect transistor (MOSFET). We present the electrical and material characteristics of TaN/ZrO2/In0.2Ga0.8As/ In0.53Ga0.47As n-MOSFET with atomic layer deposition (ALD) ZrO2. Electrical characteristics with thin capacitance equivalent thickness (CET) (∼0.8 nm), and improved drain current with thin capping layer were obtained. N-channel high-k InGaAs-MOSFETs with good transistor behavior, i.e. improved drain current after additional pulsed laser anneal with RTA anneal, on In0.53Ga0.47As substrate have also been demonstrated.",

author = "I. Ok and Hung, {P. Y.} and D. Veksler and J. Oh and Jammy, {P. Majhi R.}",

year = "2010",

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series = "2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010",

pages = "166--169",

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note = "2010 European Solid State Device Research Conference, ESSDERC 2010 ; Conference date: 14-09-2010 Through 16-09-2010",

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Ok, I, Hung, PY, Veksler, D, Oh, J & Jammy, PMR 2010, High-performance enhancement-mode In_0.53Ga_0.47As surface channels n-MOSFET with thin In_0.2Ga_0.8As capping and laser anneal effect. in 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010., 5618407, 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010, pp. 166-169, 2010 European Solid State Device Research Conference, ESSDERC 2010, Sevilla, Spain, 10/9/14. https://doi.org/10.1109/ESSDERC.2010.5618407

High-performance enhancement-mode In_0.53Ga_0.47As surface channels n-MOSFET with thin In_0.2Ga_0.8As capping and laser anneal effect. / Ok, I.; Hung, P. Y.; Veksler, D. et al.
2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. p. 166-169 5618407 (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - In this work we have investigated the effect of thin In02Ga08As capping layer and pulsed laser annealing (PLA) on self-aligned enhancement mode n-channel In0.53Ga0.47As metal-oxide-semiconductor field effect transistor (MOSFET). We present the electrical and material characteristics of TaN/ZrO2/In0.2Ga0.8As/ In0.53Ga0.47As n-MOSFET with atomic layer deposition (ALD) ZrO2. Electrical characteristics with thin capacitance equivalent thickness (CET) (∼0.8 nm), and improved drain current with thin capping layer were obtained. N-channel high-k InGaAs-MOSFETs with good transistor behavior, i.e. improved drain current after additional pulsed laser anneal with RTA anneal, on In0.53Ga0.47As substrate have also been demonstrated.

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Ok I, Hung PY, Veksler D, Oh J, Jammy PMR. High-performance enhancement-mode In_0.53Ga_0.47As surface channels n-MOSFET with thin In_0.2Ga_0.8As capping and laser anneal effect. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. p. 166-169. 5618407. (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010). doi: 10.1109/ESSDERC.2010.5618407