High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications

Youngin Goh; Junghyeon Hwang; Minki Kim; Minhyun Jung; Sehee Lim; Seong Ook Jung; Sanghun Jeon

doi:10.1109/IEDM19574.2021.9720610

High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications

Youngin Goh, Junghyeon Hwang, Minki Kim, Minhyun Jung, Sehee Lim, Seong Ook Jung, Sanghun Jeon

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

21 Citations (Scopus)

Abstract

We experimentally demonstrated high performance and self-rectifying hafnia based ferroelectric tunnel junction (FTJ) using stress engineering, diffusion barrier technology, and imprint field effect for neuromorphic computing and logic in memory application. In TiN/HZO/TaN/W stacked FTJ, W bottom electrode which has low thermal expansion coefficient enables to stabilize the ferroelectric o-phase even at ultra-thin HZO film, and TaN layer suppresses the diffusion of W atoms into ferroelectric HZO layer, resulting in reduction of leakage current and giant TER value of 100. In addition, highly asymmetric switching characteristics with rectifying ratio of 1000 is achieved using imprint field effect induced by positive fixed charges nearby bottom interface. The proposed device provides a viable solution for high performance, low power and high-density synaptic devices and TCAM applications.

Original language	English
Title of host publication	2021 IEEE International Electron Devices Meeting, IEDM 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	17.2.1-17.2.4
ISBN (Electronic)	9781665425728
DOIs	https://doi.org/10.1109/IEDM19574.2021.9720610
Publication status	Published - 2021
Event	2021 IEEE International Electron Devices Meeting, IEDM 2021 - San Francisco, United States Duration: 2021 Dec 11 → 2021 Dec 16

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2021-December
ISSN (Print)	0163-1918

Conference

Conference	2021 IEEE International Electron Devices Meeting, IEDM 2021
Country/Territory	United States
City	San Francisco
Period	21/12/11 → 21/12/16

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM19574.2021.9720610

Cite this

Goh, Y., Hwang, J., Kim, M., Jung, M., Lim, S., Jung, S. O., & Jeon, S. (2021). High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications. In 2021 IEEE International Electron Devices Meeting, IEDM 2021 (pp. 17.2.1-17.2.4). (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2021-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19574.2021.9720610

Goh, Youngin ; Hwang, Junghyeon ; Kim, Minki et al. / High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications. 2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 17.2.1-17.2.4 (Technical Digest - International Electron Devices Meeting, IEDM).

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title = "High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications",

abstract = "We experimentally demonstrated high performance and self-rectifying hafnia based ferroelectric tunnel junction (FTJ) using stress engineering, diffusion barrier technology, and imprint field effect for neuromorphic computing and logic in memory application. In TiN/HZO/TaN/W stacked FTJ, W bottom electrode which has low thermal expansion coefficient enables to stabilize the ferroelectric o-phase even at ultra-thin HZO film, and TaN layer suppresses the diffusion of W atoms into ferroelectric HZO layer, resulting in reduction of leakage current and giant TER value of 100. In addition, highly asymmetric switching characteristics with rectifying ratio of 1000 is achieved using imprint field effect induced by positive fixed charges nearby bottom interface. The proposed device provides a viable solution for high performance, low power and high-density synaptic devices and TCAM applications.",

author = "Youngin Goh and Junghyeon Hwang and Minki Kim and Minhyun Jung and Sehee Lim and Jung, {Seong Ook} and Sanghun Jeon",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Electron Devices Meeting, IEDM 2021 ; Conference date: 11-12-2021 Through 16-12-2021",

year = "2021",

doi = "10.1109/IEDM19574.2021.9720610",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

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Goh, Y, Hwang, J, Kim, M, Jung, M, Lim, S, Jung, SO & Jeon, S 2021, High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications. in 2021 IEEE International Electron Devices Meeting, IEDM 2021. Technical Digest - International Electron Devices Meeting, IEDM, vol. 2021-December, Institute of Electrical and Electronics Engineers Inc., pp. 17.2.1-17.2.4, 2021 IEEE International Electron Devices Meeting, IEDM 2021, San Francisco, United States, 21/12/11. https://doi.org/10.1109/IEDM19574.2021.9720610

High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications. / Goh, Youngin; Hwang, Junghyeon; Kim, Minki et al.
2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 17.2.1-17.2.4 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2021-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Goh, Youngin

AU - Hwang, Junghyeon

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AU - Jung, Minhyun

AU - Lim, Sehee

AU - Jung, Seong Ook

AU - Jeon, Sanghun

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N2 - We experimentally demonstrated high performance and self-rectifying hafnia based ferroelectric tunnel junction (FTJ) using stress engineering, diffusion barrier technology, and imprint field effect for neuromorphic computing and logic in memory application. In TiN/HZO/TaN/W stacked FTJ, W bottom electrode which has low thermal expansion coefficient enables to stabilize the ferroelectric o-phase even at ultra-thin HZO film, and TaN layer suppresses the diffusion of W atoms into ferroelectric HZO layer, resulting in reduction of leakage current and giant TER value of 100. In addition, highly asymmetric switching characteristics with rectifying ratio of 1000 is achieved using imprint field effect induced by positive fixed charges nearby bottom interface. The proposed device provides a viable solution for high performance, low power and high-density synaptic devices and TCAM applications.

AB - We experimentally demonstrated high performance and self-rectifying hafnia based ferroelectric tunnel junction (FTJ) using stress engineering, diffusion barrier technology, and imprint field effect for neuromorphic computing and logic in memory application. In TiN/HZO/TaN/W stacked FTJ, W bottom electrode which has low thermal expansion coefficient enables to stabilize the ferroelectric o-phase even at ultra-thin HZO film, and TaN layer suppresses the diffusion of W atoms into ferroelectric HZO layer, resulting in reduction of leakage current and giant TER value of 100. In addition, highly asymmetric switching characteristics with rectifying ratio of 1000 is achieved using imprint field effect induced by positive fixed charges nearby bottom interface. The proposed device provides a viable solution for high performance, low power and high-density synaptic devices and TCAM applications.

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Goh Y, Hwang J, Kim M, Jung M, Lim S, Jung SO et al. High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications. In 2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 17.2.1-17.2.4. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM19574.2021.9720610

High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications

Abstract

Publication series

Conference

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

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