High-performance, air-stable, p-channel WSe2 top-gate field-effect transistors (FETs) using a bilayer gate dielectric composed of high- and low-k dielectrics are reported. Using only a high-k Al2O3 as the top-gate dielectric generally degrades the electrical properties of p-channel WSe2, therefore, a thin fluoropolymer (Cytop) as a buffer layer to protect the 2D channel from high-k oxide forming is deposited. As a result, a top-gate-patterned 2D WSe2 FET is realized. The top-gate p-channel WSe2 FET demonstrates a high hole mobility of 100 cm2 V-1 s-1 and a ION/IOFF ratio > 107 at low gate voltages (VGS ca. -4 V) and a drain voltage (VDS) of -1 V on a glass substrate. Furthermore, the top-gate FET shows a very good stability in ambient air with a relative humidity of 45% for 7 days after device fabrication. Our approach of creating a high-k oxide/low-k organic bilayer dielectric is advantageous over single-layer high-k dielectrics for top-gate p-channel WSe2 FETs, which will lead the way toward future electronic nanodevices and their integration.
Bibliographical notePublisher Copyright:
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Science(all)