High-Performance 2D MoS                         2                          Phototransistor for Photo Logic Gate and Image Sensor

Young Tack Lee; Ji Hoon Kang; Kisung Kwak; Jongtae Ahn; Hyun Tae Choi; Byeong Kwon Ju; Seyed Hossein Shokouh; Seongil Im; Min Chul Park; Do Kyung Hwang

doi:10.1021/acsphotonics.8b01049

High-Performance 2D MoS ₂ Phototransistor for Photo Logic Gate and Image Sensor

Young Tack Lee, Ji Hoon Kang, Kisung Kwak, Jongtae Ahn, Hyun Tae Choi, Byeong Kwon Ju, Seyed Hossein Shokouh, Seongil Im, Min Chul Park, Do Kyung Hwang

Department of Physics

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Two-dimensional (2D) MoS ₂ is a representative n-type transition-metal dichalcogenide (TMD) semiconductor that has great potential for future nanoscale electronic and optoelectronic applications. Here, we report a high-performance MoS ₂ phototransistor that exhibits a photoresponse in the 400-700 nm range with the maximum responsivity of over 1 × 10 ⁴ A/W. As a more sophisticated optoelectronic application than a simple unit device, it is implemented in a photoinverter (NOT logic gate) connected to an external resistor, which clearly shows photoinduced static and dynamic characteristics. Furthermore, we demonstrate a prototype visible imager using the MoS ₂ photoinverter as imaging pixels as an excellent example of advanced developments in an optoelectronic system based on the 2D semiconductors.

Original language	English
Pages (from-to)	4745-4750
Number of pages	6
Journal	ACS Photonics
Volume	5
Issue number	12
DOIs	https://doi.org/10.1021/acsphotonics.8b01049
Publication status	Published - 2018 Dec 19

Bibliographical note

Funding Information:
D.K.H. acknowledges the financial support from the Korea Institute of Science and Technology (KIST) Institution Program (Grant Nos. 2E28180 and 2E28200) and the National Research Foundation of Korea (NRF) (Grant No. 2017R1A2B2005640). S.I. acknowledges the financial support from NRF (SRC program: Grant No. 2017R1A5A1014862 vdWMRC center). This research was supported by Basic Science Research Program through the NRF funded by the Ministry of Education (2010-0020163) (Y.T.L.). M.C.P. acknowledges the financial support from the Ministry of Culture, Sports and Tourism (MCST) and the Korea Creative Content Agency (KOCCA) in the Culture Technology (CT) Research & Development Program 2018 (R2017060005, Development of AR Platform based on Hologram).

Funding Information:
D.K.H. acknowledges the financial support from the Korea Institute of Science and Technology (KIST) Institution Program (Grant Nos. 2E28180 and 2E28200) and the National Research Foundation of Korea (NRF) (Grant No. 2017R1A2B2005640). S.I. acknowledges the financial support from NRF (SRC program: Grant No. 2017R1A5A1014862, vdWMRC center). This research was supported by Basic Science Research Program through the NRF funded by the Ministry of Education (2010-0020163) (Y.T.L.). M.C.P. acknowledges the financial support from the Ministry of Culture, Sports and Tourism (MCST) and the Korea Creative Content Agency (KOCCA) in the Culture Technology (CT) Research & Development Program 2018 (R2017060005, Development of AR Platform based on Hologram).

Publisher Copyright:
Copyright © 2018 American Chemical Society.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Biotechnology
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1021/acsphotonics.8b01049

Cite this

Lee, Y. T., Kang, J. H., Kwak, K., Ahn, J., Choi, H. T., Ju, B. K., Shokouh, S. H., Im, S., Park, M. C., & Hwang, D. K. (2018). High-Performance 2D MoS ₂ Phototransistor for Photo Logic Gate and Image Sensor ACS Photonics, 5(12), 4745-4750. https://doi.org/10.1021/acsphotonics.8b01049

@article{ef5215647fd648faab39ba7caaf3d634,

title = " High-Performance 2D MoS 2 Phototransistor for Photo Logic Gate and Image Sensor ",

abstract = " Two-dimensional (2D) MoS 2 is a representative n-type transition-metal dichalcogenide (TMD) semiconductor that has great potential for future nanoscale electronic and optoelectronic applications. Here, we report a high-performance MoS 2 phototransistor that exhibits a photoresponse in the 400-700 nm range with the maximum responsivity of over 1 × 10 4 A/W. As a more sophisticated optoelectronic application than a simple unit device, it is implemented in a photoinverter (NOT logic gate) connected to an external resistor, which clearly shows photoinduced static and dynamic characteristics. Furthermore, we demonstrate a prototype visible imager using the MoS 2 photoinverter as imaging pixels as an excellent example of advanced developments in an optoelectronic system based on the 2D semiconductors.",

author = "Lee, {Young Tack} and Kang, {Ji Hoon} and Kisung Kwak and Jongtae Ahn and Choi, {Hyun Tae} and Ju, {Byeong Kwon} and Shokouh, {Seyed Hossein} and Seongil Im and Park, {Min Chul} and Hwang, {Do Kyung}",

note = "Funding Information: D.K.H. acknowledges the financial support from the Korea Institute of Science and Technology (KIST) Institution Program (Grant Nos. 2E28180 and 2E28200) and the National Research Foundation of Korea (NRF) (Grant No. 2017R1A2B2005640). S.I. acknowledges the financial support from NRF (SRC program: Grant No. 2017R1A5A1014862 vdWMRC center). This research was supported by Basic Science Research Program through the NRF funded by the Ministry of Education (2010-0020163) (Y.T.L.). M.C.P. acknowledges the financial support from the Ministry of Culture, Sports and Tourism (MCST) and the Korea Creative Content Agency (KOCCA) in the Culture Technology (CT) Research & Development Program 2018 (R2017060005, Development of AR Platform based on Hologram). Funding Information: D.K.H. acknowledges the financial support from the Korea Institute of Science and Technology (KIST) Institution Program (Grant Nos. 2E28180 and 2E28200) and the National Research Foundation of Korea (NRF) (Grant No. 2017R1A2B2005640). S.I. acknowledges the financial support from NRF (SRC program: Grant No. 2017R1A5A1014862, vdWMRC center). This research was supported by Basic Science Research Program through the NRF funded by the Ministry of Education (2010-0020163) (Y.T.L.). M.C.P. acknowledges the financial support from the Ministry of Culture, Sports and Tourism (MCST) and the Korea Creative Content Agency (KOCCA) in the Culture Technology (CT) Research & Development Program 2018 (R2017060005, Development of AR Platform based on Hologram). Publisher Copyright: Copyright {\textcopyright} 2018 American Chemical Society.",

year = "2018",

month = dec,

day = "19",

doi = "10.1021/acsphotonics.8b01049",

language = "English",

volume = "5",

pages = "4745--4750",

journal = "ACS Photonics",

issn = "2330-4022",

publisher = "American Chemical Society",

number = "12",

}

TY - JOUR

T1 - High-Performance 2D MoS 2 Phototransistor for Photo Logic Gate and Image Sensor

AU - Lee, Young Tack

AU - Kang, Ji Hoon

AU - Kwak, Kisung

AU - Ahn, Jongtae

AU - Choi, Hyun Tae

AU - Ju, Byeong Kwon

AU - Shokouh, Seyed Hossein

AU - Im, Seongil

AU - Park, Min Chul

AU - Hwang, Do Kyung

N1 - Funding Information: D.K.H. acknowledges the financial support from the Korea Institute of Science and Technology (KIST) Institution Program (Grant Nos. 2E28180 and 2E28200) and the National Research Foundation of Korea (NRF) (Grant No. 2017R1A2B2005640). S.I. acknowledges the financial support from NRF (SRC program: Grant No. 2017R1A5A1014862 vdWMRC center). This research was supported by Basic Science Research Program through the NRF funded by the Ministry of Education (2010-0020163) (Y.T.L.). M.C.P. acknowledges the financial support from the Ministry of Culture, Sports and Tourism (MCST) and the Korea Creative Content Agency (KOCCA) in the Culture Technology (CT) Research & Development Program 2018 (R2017060005, Development of AR Platform based on Hologram). Funding Information: D.K.H. acknowledges the financial support from the Korea Institute of Science and Technology (KIST) Institution Program (Grant Nos. 2E28180 and 2E28200) and the National Research Foundation of Korea (NRF) (Grant No. 2017R1A2B2005640). S.I. acknowledges the financial support from NRF (SRC program: Grant No. 2017R1A5A1014862, vdWMRC center). This research was supported by Basic Science Research Program through the NRF funded by the Ministry of Education (2010-0020163) (Y.T.L.). M.C.P. acknowledges the financial support from the Ministry of Culture, Sports and Tourism (MCST) and the Korea Creative Content Agency (KOCCA) in the Culture Technology (CT) Research & Development Program 2018 (R2017060005, Development of AR Platform based on Hologram). Publisher Copyright: Copyright © 2018 American Chemical Society.

PY - 2018/12/19

Y1 - 2018/12/19

N2 - Two-dimensional (2D) MoS 2 is a representative n-type transition-metal dichalcogenide (TMD) semiconductor that has great potential for future nanoscale electronic and optoelectronic applications. Here, we report a high-performance MoS 2 phototransistor that exhibits a photoresponse in the 400-700 nm range with the maximum responsivity of over 1 × 10 4 A/W. As a more sophisticated optoelectronic application than a simple unit device, it is implemented in a photoinverter (NOT logic gate) connected to an external resistor, which clearly shows photoinduced static and dynamic characteristics. Furthermore, we demonstrate a prototype visible imager using the MoS 2 photoinverter as imaging pixels as an excellent example of advanced developments in an optoelectronic system based on the 2D semiconductors.

AB - Two-dimensional (2D) MoS 2 is a representative n-type transition-metal dichalcogenide (TMD) semiconductor that has great potential for future nanoscale electronic and optoelectronic applications. Here, we report a high-performance MoS 2 phototransistor that exhibits a photoresponse in the 400-700 nm range with the maximum responsivity of over 1 × 10 4 A/W. As a more sophisticated optoelectronic application than a simple unit device, it is implemented in a photoinverter (NOT logic gate) connected to an external resistor, which clearly shows photoinduced static and dynamic characteristics. Furthermore, we demonstrate a prototype visible imager using the MoS 2 photoinverter as imaging pixels as an excellent example of advanced developments in an optoelectronic system based on the 2D semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=85058803802&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85058803802&partnerID=8YFLogxK

U2 - 10.1021/acsphotonics.8b01049

DO - 10.1021/acsphotonics.8b01049

M3 - Article

AN - SCOPUS:85058803802

SN - 2330-4022

VL - 5

SP - 4745

EP - 4750

JO - ACS Photonics

JF - ACS Photonics

IS - 12

ER -