High-mobility TaN/Al2O3 /Ge(111) n-MOSFETs with RTO-grown passivation layer

M. Jamil, J. Oh, M. Ramon, S. Kaur, P. Majhi, E. Tutuc, S. K. Banerjee

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

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