Low voltage high mobility n-type thin film transistors (TFTs) based on sol-gel processed zinc oxide (ZnO) were fabricated using a high capacitance ion gel gate dielectric. The ion gel gated solution-processed ZnO TFTs were found to exhibit excellent electrical properties. TFT carrier mobilities were 13 cm 2 /V s, ON/OFF current ratios were 105, regardless of the sintering temperature used for the preparation of the ZnO thin films. Ion gel gated ZnO TFTs are successfully demonstrated on plastic substrates for the large area flexible electronics.
Bibliographical noteFunding Information:
This work was supported by a grant from the Information Display R&D Center under the 21st Century Frontier R&D Program (Grant No. F0004021-2009-32), Basic Science Research Program (Grant No. 2009-0073278), and Creative Research Initiative-Acceleration Research (Grant No. 2010-0000757) from NRF. The authors thank the PAL for providing the synchrotron radiation sources at the 5A, 8A2, and 8C1 beam lines used in this study.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)