High-mobility low-temperature ZnO transistors with low-voltage operation

Hyojin Bong; Wi Hyoung Lee; Dong Yun Lee; Beom Joon Kim; Jeong Ho Cho; Kilwon Cho

doi:10.1063/1.3428357

High-mobility low-temperature ZnO transistors with low-voltage operation

Hyojin Bong, Wi Hyoung Lee, Dong Yun Lee, Beom Joon Kim, Jeong Ho Cho, Kilwon Cho

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

110 Citations (Scopus)

Abstract

Low voltage high mobility n-type thin film transistors (TFTs) based on sol-gel processed zinc oxide (ZnO) were fabricated using a high capacitance ion gel gate dielectric. The ion gel gated solution-processed ZnO TFTs were found to exhibit excellent electrical properties. TFT carrier mobilities were 13 cm ² /V s, ON/OFF current ratios were 10⁵, regardless of the sintering temperature used for the preparation of the ZnO thin films. Ion gel gated ZnO TFTs are successfully demonstrated on plastic substrates for the large area flexible electronics.

Original language	English
Article number	192115
Journal	Applied Physics Letters
Volume	96
Issue number	19
DOIs	https://doi.org/10.1063/1.3428357
Publication status	Published - 2010

Bibliographical note

Funding Information:
This work was supported by a grant from the Information Display R&D Center under the 21st Century Frontier R&D Program (Grant No. F0004021-2009-32), Basic Science Research Program (Grant No. 2009-0073278), and Creative Research Initiative-Acceleration Research (Grant No. 2010-0000757) from NRF. The authors thank the PAL for providing the synchrotron radiation sources at the 5A, 8A2, and 8C1 beam lines used in this study.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3428357

Cite this

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title = "High-mobility low-temperature ZnO transistors with low-voltage operation",

abstract = "Low voltage high mobility n-type thin film transistors (TFTs) based on sol-gel processed zinc oxide (ZnO) were fabricated using a high capacitance ion gel gate dielectric. The ion gel gated solution-processed ZnO TFTs were found to exhibit excellent electrical properties. TFT carrier mobilities were 13 cm 2 /V s, ON/OFF current ratios were 105, regardless of the sintering temperature used for the preparation of the ZnO thin films. Ion gel gated ZnO TFTs are successfully demonstrated on plastic substrates for the large area flexible electronics.",

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doi = "10.1063/1.3428357",

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AU - Lee, Wi Hyoung

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AU - Kim, Beom Joon

AU - Cho, Jeong Ho

AU - Cho, Kilwon

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PY - 2010

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AB - Low voltage high mobility n-type thin film transistors (TFTs) based on sol-gel processed zinc oxide (ZnO) were fabricated using a high capacitance ion gel gate dielectric. The ion gel gated solution-processed ZnO TFTs were found to exhibit excellent electrical properties. TFT carrier mobilities were 13 cm 2 /V s, ON/OFF current ratios were 105, regardless of the sintering temperature used for the preparation of the ZnO thin films. Ion gel gated ZnO TFTs are successfully demonstrated on plastic substrates for the large area flexible electronics.

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High-mobility low-temperature ZnO transistors with low-voltage operation

Abstract

Bibliographical note

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