High-k nanomixed HfxAlyOz film capacitors grown on Ru metal electrodes by atomic layer deposition

Nak Jin Seong; Soon Gil Yoon; Seung Jin Yeom; Hyun Kyung Woo; Deok Sin Kil; Jae Sung Roh; Hyun Chul Sohn

doi:10.1149/1.2017925

High-k nanomixed Hf_xAl_yO_z film capacitors grown on Ru metal electrodes by atomic layer deposition

Nak Jin Seong, Soon Gil Yoon, Seung Jin Yeom, Hyun Kyung Woo, Deok Sin Kil, Jae Sung Roh, Hyun Chul Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The Hf_xAl_yO_z nanomixed films were deposited at 300°C on Ru/TiN/Ti/SiO₂/Si substrates using an atomic layer deposition and the electrical properties of Ru/Hf _xAl_yO_z/Ru capacitors were investigated as a function of a film thickness and rapid thermal annealing temperature. The dielectric constant, dielectric loss, and leakage current density at 1.0 V in the films of 7 nm thickness were approximately 16, 0.9%, and 1 × 10 ^-6 A/cm², respectively. The capacitors exhibit the stable electrical properties in a thermal treatment up to 800°C. The Ru/Hf _xAl_yO_z/Ru capacitors with an equivalent oxide thickness of 11Å in film thickness of 6 nm are possible to apply for 70 nm generation dynamic random access memory application.

Original language	English
Pages (from-to)	F40-F42
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	10
DOIs	https://doi.org/10.1149/1.2017925
Publication status	Published - 2005

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.2017925

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title = "High-k nanomixed HfxAlyOz film capacitors grown on Ru metal electrodes by atomic layer deposition",

abstract = "The HfxAlyOz nanomixed films were deposited at 300°C on Ru/TiN/Ti/SiO2/Si substrates using an atomic layer deposition and the electrical properties of Ru/Hf xAlyOz/Ru capacitors were investigated as a function of a film thickness and rapid thermal annealing temperature. The dielectric constant, dielectric loss, and leakage current density at 1.0 V in the films of 7 nm thickness were approximately 16, 0.9%, and 1 × 10 -6 A/cm2, respectively. The capacitors exhibit the stable electrical properties in a thermal treatment up to 800°C. The Ru/Hf xAlyOz/Ru capacitors with an equivalent oxide thickness of 11{\AA} in film thickness of 6 nm are possible to apply for 70 nm generation dynamic random access memory application.",

author = "Seong, {Nak Jin} and Yoon, {Soon Gil} and Yeom, {Seung Jin} and Woo, {Hyun Kyung} and Kil, {Deok Sin} and Roh, {Jae Sung} and Sohn, {Hyun Chul}",

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T1 - High-k nanomixed HfxAlyOz film capacitors grown on Ru metal electrodes by atomic layer deposition

AU - Seong, Nak Jin

AU - Yoon, Soon Gil

AU - Yeom, Seung Jin

AU - Woo, Hyun Kyung

AU - Kil, Deok Sin

AU - Roh, Jae Sung

AU - Sohn, Hyun Chul

PY - 2005

Y1 - 2005

N2 - The HfxAlyOz nanomixed films were deposited at 300°C on Ru/TiN/Ti/SiO2/Si substrates using an atomic layer deposition and the electrical properties of Ru/Hf xAlyOz/Ru capacitors were investigated as a function of a film thickness and rapid thermal annealing temperature. The dielectric constant, dielectric loss, and leakage current density at 1.0 V in the films of 7 nm thickness were approximately 16, 0.9%, and 1 × 10 -6 A/cm2, respectively. The capacitors exhibit the stable electrical properties in a thermal treatment up to 800°C. The Ru/Hf xAlyOz/Ru capacitors with an equivalent oxide thickness of 11Å in film thickness of 6 nm are possible to apply for 70 nm generation dynamic random access memory application.

AB - The HfxAlyOz nanomixed films were deposited at 300°C on Ru/TiN/Ti/SiO2/Si substrates using an atomic layer deposition and the electrical properties of Ru/Hf xAlyOz/Ru capacitors were investigated as a function of a film thickness and rapid thermal annealing temperature. The dielectric constant, dielectric loss, and leakage current density at 1.0 V in the films of 7 nm thickness were approximately 16, 0.9%, and 1 × 10 -6 A/cm2, respectively. The capacitors exhibit the stable electrical properties in a thermal treatment up to 800°C. The Ru/Hf xAlyOz/Ru capacitors with an equivalent oxide thickness of 11Å in film thickness of 6 nm are possible to apply for 70 nm generation dynamic random access memory application.

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High-k nanomixed Hf_xAl_yO_z film capacitors grown on Ru metal electrodes by atomic layer deposition

Abstract

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