High fill-factor IR bolometer using multi-level electrothermal structures

Hyung Kew Lee; Jun Bo Yoon; Euisik Yoon; Sang Baek Ju; Yoon Joong Yong; Wook Lee; Sang Gook Kim

High fill-factor IR bolometer using multi-level electrothermal structures

Hyung Kew Lee, Jun Bo Yoon, Euisik Yoon, Sang Baek Ju, Yoon Joong Yong, Wook Lee, Sang Gook Kim

Yonsei Advanced Science Institute

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

In this paper we report the design, fabrication, and performance of a high fill-factor uncooled IR (Infrared) bolometer using thin-film titanium resistors sandwiched in a surface-micromachined silicon oxinitride membrane (50 μ×50 μm). This bolometer structure comprises multilevel electrothermal structures, which allow almost 92% fill factor. From this multi-layered structure, thermal isolation can be independently optimized without sacrificing IR absorbing area. Initial measurements show a thermal time constant of 12 msec, a responsivity of 1600 V/W, and a datectivity of D* = 5×10⁸ cm√Hz/W.

Original language	English
Pages (from-to)	463-466
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 1998
Event	Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 1998 Dec 6 → 1998 Dec 9

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{4d62578d18034d0294a78de50a44517f,

title = "High fill-factor IR bolometer using multi-level electrothermal structures",

abstract = "In this paper we report the design, fabrication, and performance of a high fill-factor uncooled IR (Infrared) bolometer using thin-film titanium resistors sandwiched in a surface-micromachined silicon oxinitride membrane (50 μ×50 μm). This bolometer structure comprises multilevel electrothermal structures, which allow almost 92% fill factor. From this multi-layered structure, thermal isolation can be independently optimized without sacrificing IR absorbing area. Initial measurements show a thermal time constant of 12 msec, a responsivity of 1600 V/W, and a datectivity of D* = 5×108 cm√Hz/W.",

author = "Lee, {Hyung Kew} and Yoon, {Jun Bo} and Euisik Yoon and Ju, {Sang Baek} and Yong, {Yoon Joong} and Wook Lee and Kim, {Sang Gook}",

year = "1998",

language = "English",

pages = "463--466",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 IEEE International Electron Devices Meeting ; Conference date: 06-12-1998 Through 09-12-1998",

}

TY - JOUR

T1 - High fill-factor IR bolometer using multi-level electrothermal structures

AU - Lee, Hyung Kew

AU - Yoon, Jun Bo

AU - Yoon, Euisik

AU - Ju, Sang Baek

AU - Yong, Yoon Joong

AU - Lee, Wook

AU - Kim, Sang Gook

PY - 1998

Y1 - 1998

N2 - In this paper we report the design, fabrication, and performance of a high fill-factor uncooled IR (Infrared) bolometer using thin-film titanium resistors sandwiched in a surface-micromachined silicon oxinitride membrane (50 μ×50 μm). This bolometer structure comprises multilevel electrothermal structures, which allow almost 92% fill factor. From this multi-layered structure, thermal isolation can be independently optimized without sacrificing IR absorbing area. Initial measurements show a thermal time constant of 12 msec, a responsivity of 1600 V/W, and a datectivity of D* = 5×108 cm√Hz/W.

AB - In this paper we report the design, fabrication, and performance of a high fill-factor uncooled IR (Infrared) bolometer using thin-film titanium resistors sandwiched in a surface-micromachined silicon oxinitride membrane (50 μ×50 μm). This bolometer structure comprises multilevel electrothermal structures, which allow almost 92% fill factor. From this multi-layered structure, thermal isolation can be independently optimized without sacrificing IR absorbing area. Initial measurements show a thermal time constant of 12 msec, a responsivity of 1600 V/W, and a datectivity of D* = 5×108 cm√Hz/W.

UR - http://www.scopus.com/inward/record.url?scp=0032255795&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032255795&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032255795

SN - 0163-1918

SP - 463

EP - 466

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1998 IEEE International Electron Devices Meeting

Y2 - 6 December 1998 through 9 December 1998

ER -

High fill-factor IR bolometer using multi-level electrothermal structures

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this