High fill-factor IR bolometer using multi-level electrothermal structures

Hyung Kew Lee, Jun Bo Yoon, Euisik Yoon, Sang Baek Ju, Yoon Joong Yong, Wook Lee, Sang Gook Kim

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


In this paper we report the design, fabrication, and performance of a high fill-factor uncooled IR (Infrared) bolometer using thin-film titanium resistors sandwiched in a surface-micromachined silicon oxinitride membrane (50 μ×50 μm). This bolometer structure comprises multilevel electrothermal structures, which allow almost 92% fill factor. From this multi-layered structure, thermal isolation can be independently optimized without sacrificing IR absorbing area. Initial measurements show a thermal time constant of 12 msec, a responsivity of 1600 V/W, and a datectivity of D* = 5×108 cm√Hz/W.

Original languageEnglish
Pages (from-to)463-466
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1998
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1998 Dec 61998 Dec 9

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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