High electrical performance of wet-processed indium zinc oxide thin-film transistors

Kyung Bae Park; Jong Baek Seon; Gun Hee Kim; Mino Yang; Bonwon Koo; Hyun Jae Kim; Myung Kwan Ryu; Sang Yoon Lee

doi:10.1109/LED.2010.2040130

High electrical performance of wet-processed indium zinc oxide thin-film transistors

Kyung Bae Park, Jong Baek Seon, Gun Hee Kim, Mino Yang, Bonwon Koo, Hyun Jae Kim, Myung Kwan Ryu, Sang Yoon Lee

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

73 Citations (Scopus)

Abstract

We developed thin-film transistors (TFTs) that use solution-processed amorphous indium zinc oxide for the channels in an all-photolithographic process. The transistors, which operate in depletion mode, have excellent transfer characteristics, including saturation mobility of 6.57 cm²/ V.s, threshold voltages of-0.30 V, turn-on voltages of-1.50 V, on/off ratios of 10⁹, and inverse subthreshold slopes of 0.15 V/dec. We measured the time, temperature, gate voltage, and drain-voltage dependence of the threshold voltage shift, which was 2.16 V under stress conditions. This is nearly the same as that of conventional amorphous silicon TFTs.

Original language	English
Article number	21
Pages (from-to)	311-313
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	4
DOIs	https://doi.org/10.1109/LED.2010.2040130
Publication status	Published - 2010 Apr

Bibliographical note

Funding Information:
Manuscript received November 2, 2009; revised December 14, 2009. First published February 17, 2010; current version published March 24, 2010. This work was supported in part by the research project of Samsung Advanced Institute of Technology. The review of this letter was arranged by Editor J. K. O. Sin.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2010.2040130

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@article{1b67b88069c7465babc7dbd8bce1beaa,

title = "High electrical performance of wet-processed indium zinc oxide thin-film transistors",

abstract = "We developed thin-film transistors (TFTs) that use solution-processed amorphous indium zinc oxide for the channels in an all-photolithographic process. The transistors, which operate in depletion mode, have excellent transfer characteristics, including saturation mobility of 6.57 cm2/ V.s, threshold voltages of-0.30 V, turn-on voltages of-1.50 V, on/off ratios of 109, and inverse subthreshold slopes of 0.15 V/dec. We measured the time, temperature, gate voltage, and drain-voltage dependence of the threshold voltage shift, which was 2.16 V under stress conditions. This is nearly the same as that of conventional amorphous silicon TFTs.",

author = "Park, {Kyung Bae} and Seon, {Jong Baek} and Kim, {Gun Hee} and Mino Yang and Bonwon Koo and Kim, {Hyun Jae} and Ryu, {Myung Kwan} and Lee, {Sang Yoon}",

note = "Funding Information: Manuscript received November 2, 2009; revised December 14, 2009. First published February 17, 2010; current version published March 24, 2010. This work was supported in part by the research project of Samsung Advanced Institute of Technology. The review of this letter was arranged by Editor J. K. O. Sin.",

year = "2010",

month = apr,

doi = "10.1109/LED.2010.2040130",

language = "English",

volume = "31",

pages = "311--313",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - High electrical performance of wet-processed indium zinc oxide thin-film transistors

AU - Park, Kyung Bae

AU - Seon, Jong Baek

AU - Kim, Gun Hee

AU - Yang, Mino

AU - Koo, Bonwon

AU - Kim, Hyun Jae

AU - Ryu, Myung Kwan

AU - Lee, Sang Yoon

N1 - Funding Information: Manuscript received November 2, 2009; revised December 14, 2009. First published February 17, 2010; current version published March 24, 2010. This work was supported in part by the research project of Samsung Advanced Institute of Technology. The review of this letter was arranged by Editor J. K. O. Sin.

PY - 2010/4

Y1 - 2010/4

N2 - We developed thin-film transistors (TFTs) that use solution-processed amorphous indium zinc oxide for the channels in an all-photolithographic process. The transistors, which operate in depletion mode, have excellent transfer characteristics, including saturation mobility of 6.57 cm2/ V.s, threshold voltages of-0.30 V, turn-on voltages of-1.50 V, on/off ratios of 109, and inverse subthreshold slopes of 0.15 V/dec. We measured the time, temperature, gate voltage, and drain-voltage dependence of the threshold voltage shift, which was 2.16 V under stress conditions. This is nearly the same as that of conventional amorphous silicon TFTs.

AB - We developed thin-film transistors (TFTs) that use solution-processed amorphous indium zinc oxide for the channels in an all-photolithographic process. The transistors, which operate in depletion mode, have excellent transfer characteristics, including saturation mobility of 6.57 cm2/ V.s, threshold voltages of-0.30 V, turn-on voltages of-1.50 V, on/off ratios of 109, and inverse subthreshold slopes of 0.15 V/dec. We measured the time, temperature, gate voltage, and drain-voltage dependence of the threshold voltage shift, which was 2.16 V under stress conditions. This is nearly the same as that of conventional amorphous silicon TFTs.

UR - http://www.scopus.com/inward/record.url?scp=77950095921&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77950095921&partnerID=8YFLogxK

U2 - 10.1109/LED.2010.2040130

DO - 10.1109/LED.2010.2040130

M3 - Article

AN - SCOPUS:77950095921

SN - 0741-3106

VL - 31

SP - 311

EP - 313

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

M1 - 21

ER -

High electrical performance of wet-processed indium zinc oxide thin-film transistors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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