@inproceedings{f1107c6ab30d407c87429752b4618d25,
title = "High-efficiency performance of microwave power 4H-SiC amplifiers",
abstract = "The high frequency performance of a 4H-SiC MESFET is examined using an advanced harmonic-balance device/circuit simulator combined with the two-dimensional device simulator PISCES-IIB. Very good agreement with experimental experimental measurements is achieved. Circuit and device optimizations are discussed. An improved device structure with a maximum power added efficiency approaching the theoretical limit is predicted.",
author = "Shin, {M. W.} and Kordas, {T. J.} and Trew, {R. J.}",
year = "1995",
language = "English",
isbn = "0780326199",
series = "IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)",
pages = "497--500",
booktitle = "IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)",
note = "Proceedings of the 1995 IEEE International Symposium on Power Semicomductor Devices and ICs ; Conference date: 23-05-1995 Through 25-05-1995",
}