High efficiency n-ZnO/p-Si core-shell nanowire photodiode based on well-ordered Si nanowire array with smooth surface

Kyung Yong Ko; Hyemin Kang; Jungkil Kim; Woo Lee; Hee Sung Lee; Seongil Im; Ji Yeon Kang; Jae Min Myoung; Han Gil Kim; Soo Hyun Kim; Hyungjun Kim

doi:10.1016/j.mssp.2014.07.012

High efficiency n-ZnO/p-Si core-shell nanowire photodiode based on well-ordered Si nanowire array with smooth surface

Kyung Yong Ko, Hyemin Kang, Jungkil Kim, Woo Lee, Hee Sung Lee, Seongil Im, Ji Yeon Kang, Jae Min Myoung, Han Gil Kim, Soo Hyun Kim, Hyungjun Kim

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

A highly efficient n-ZnO/p-Si core-shell nanowire (NW) photodiode was fabricated using ZnO grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Si NW arrays were prepared by metal-assisted chemical etching, for which a metal mesh with a well-organized nanohole array was made using anodic aluminum oxide. This resulted in a good arrangement, smooth surface, and small diameter distribution of the Si NW array. Consequently, ZnO layers with various thicknesses from 15 to 30 nm were deposited by the ALD method. Because of the smooth surface of the well-ordered Si NWs yielding low surface roughness scattering, the resulting photodiode showed significantly improved device characteristics.

Original language	English
Pages (from-to)	297-302
Number of pages	6
Journal	Materials Science in Semiconductor Processing
Volume	27
Issue number	1
DOIs	https://doi.org/10.1016/j.mssp.2014.07.012
Publication status	Published - 2014 Nov

Bibliographical note

Funding Information:
This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology ( 2013K000173 ). In addition, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) ( 2011-0028594 )

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.mssp.2014.07.012

Cite this

@article{a11e54ca0d334700b1e79468a8902e7d,

title = "High efficiency n-ZnO/p-Si core-shell nanowire photodiode based on well-ordered Si nanowire array with smooth surface",

abstract = "A highly efficient n-ZnO/p-Si core-shell nanowire (NW) photodiode was fabricated using ZnO grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Si NW arrays were prepared by metal-assisted chemical etching, for which a metal mesh with a well-organized nanohole array was made using anodic aluminum oxide. This resulted in a good arrangement, smooth surface, and small diameter distribution of the Si NW array. Consequently, ZnO layers with various thicknesses from 15 to 30 nm were deposited by the ALD method. Because of the smooth surface of the well-ordered Si NWs yielding low surface roughness scattering, the resulting photodiode showed significantly improved device characteristics.",

author = "Ko, {Kyung Yong} and Hyemin Kang and Jungkil Kim and Woo Lee and Lee, {Hee Sung} and Seongil Im and Kang, {Ji Yeon} and Myoung, {Jae Min} and Kim, {Han Gil} and Kim, {Soo Hyun} and Hyungjun Kim",

note = "Funding Information: This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology ( 2013K000173 ). In addition, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) ( 2011-0028594 ) ",

year = "2014",

month = nov,

doi = "10.1016/j.mssp.2014.07.012",

language = "English",

volume = "27",

pages = "297--302",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

number = "1",

}

TY - JOUR

T1 - High efficiency n-ZnO/p-Si core-shell nanowire photodiode based on well-ordered Si nanowire array with smooth surface

AU - Ko, Kyung Yong

AU - Kang, Hyemin

AU - Kim, Jungkil

AU - Lee, Woo

AU - Lee, Hee Sung

AU - Im, Seongil

AU - Kang, Ji Yeon

AU - Myoung, Jae Min

AU - Kim, Han Gil

AU - Kim, Soo Hyun

AU - Kim, Hyungjun

N1 - Funding Information: This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology ( 2013K000173 ). In addition, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) ( 2011-0028594 )

PY - 2014/11

Y1 - 2014/11

N2 - A highly efficient n-ZnO/p-Si core-shell nanowire (NW) photodiode was fabricated using ZnO grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Si NW arrays were prepared by metal-assisted chemical etching, for which a metal mesh with a well-organized nanohole array was made using anodic aluminum oxide. This resulted in a good arrangement, smooth surface, and small diameter distribution of the Si NW array. Consequently, ZnO layers with various thicknesses from 15 to 30 nm were deposited by the ALD method. Because of the smooth surface of the well-ordered Si NWs yielding low surface roughness scattering, the resulting photodiode showed significantly improved device characteristics.

AB - A highly efficient n-ZnO/p-Si core-shell nanowire (NW) photodiode was fabricated using ZnO grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Si NW arrays were prepared by metal-assisted chemical etching, for which a metal mesh with a well-organized nanohole array was made using anodic aluminum oxide. This resulted in a good arrangement, smooth surface, and small diameter distribution of the Si NW array. Consequently, ZnO layers with various thicknesses from 15 to 30 nm were deposited by the ALD method. Because of the smooth surface of the well-ordered Si NWs yielding low surface roughness scattering, the resulting photodiode showed significantly improved device characteristics.

UR - http://www.scopus.com/inward/record.url?scp=84905047960&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84905047960&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2014.07.012

DO - 10.1016/j.mssp.2014.07.012

M3 - Article

AN - SCOPUS:84905047960

SN - 1369-8001

VL - 27

SP - 297

EP - 302

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 1

ER -

High efficiency n-ZnO/p-Si core-shell nanowire photodiode based on well-ordered Si nanowire array with smooth surface

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this